Description

The circuit is a two-stages self biased wide band monolithic low noise amplifier.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.

Main Feature

■< Broad band performance 20-30GHz

■< 2.2dB noise figure

■< 15dB gain, ± 0.5dB gain flatness

■< Low DC power consumption, 50mA

■< 20dBm 3rd order intercept point

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