Description

The circuit is a three-stage self biased wide band monolithic low noise amplifier.

The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Main Features

• Broad band performance 18-31GHz

• 2.5dB noise figure

• 22dB gain, ± 1dB gain flatness

• Low DC power consumption, 55mA

• 20dBm 3rd order intercept point

• Chip size : 2,170 x 1,270x 0.1mm