N-CHANNEL ENHANCEMENT MODE

N-CHANNEL ENHANCEMENT MODE ■ DESCRIPTION As N-Channel power MOSFETs the UTP45N02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. ■ FEATURES * 45A, 20V * RDS(ON) = 0.022Ω * Temperature compensating PSPICE model * Be dri

Trench Power MOSFET  (N-CH)

As N-Channel power MOSFETs the UTP45N02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. • 45A, 20V \n• RDS(ON) = 0.022 Ω \n• Temperature compensating PSPICE model \n• Be driven directly from CMOS, NMOS, and TTL circuits \n• Peak current vs. pulse width curve;

N-CHANNEL ENHANCEMENT MODE

N-CHANNEL ENHANCEMENT MODE ■ DESCRIPTION As N-Channel power MOSFETs the UTP45N02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. ■ FEATURES * 45A, 20V * RDS(ON) = 0.022Ω * Temperature compensating PSPICE model * Be dri

N-CHANNEL ENHANCEMENT MODE

N-CHANNEL ENHANCEMENT MODE ■ DESCRIPTION As N-Channel power MOSFETs the UTP45N02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. ■ FEATURES * 45A, 20V * RDS(ON) = 0.022Ω * Temperature compensating PSPICE model * Be dri

N-CHANNEL ENHANCEMENT MODE

N-CHANNEL ENHANCEMENT MODE ■ DESCRIPTION As N-Channel power MOSFETs the UTP45N02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. ■ FEATURES * 45A, 20V * RDS(ON) = 0.022Ω * Temperature compensating PSPICE model * Be dri

N-CHANNEL ENHANCEMENT MODE

N-CHANNEL ENHANCEMENT MODE ■ DESCRIPTION As N-Channel power MOSFETs the UTP45N02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. ■ FEATURES * 45A, 20V * RDS(ON) = 0.022Ω * Temperature compensating PSPICE model * Be dri

45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs

Description The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for

45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs

Description The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for

丝印代码：HM45N02D；Hard switched and high frequency circuits

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20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：175.53 Kbytes Page：6 Pages