P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The UTC UT2327 is P-channel enhancement mode Power MOSFET, designed in serried ranks. with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Trench Power MOSFET  (P-CH)

P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The UTC UT2327 is P-channel enhancement mode Power MOSFET, designed in serried ranks. with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The UTC UT2327 is P-channel enhancement mode Power MOSFET, designed in serried ranks. with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：250.86 Kbytes Page：5 Pages

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：250.86 Kbytes Page：5 Pages

Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs

General Description The MAX2320/MAX2321/MAX2322/MAX2324/MAX2326/MAX2327 high-performance silicon germanium (SiGe) receiver front-end ICs set a new industry standard forlow noise and high linearity at a low supply current. This family integrates a variety of unique features such as an LO frequency

Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs

General Description The MAX2320/MAX2321/MAX2322/MAX2324/MAX2326/MAX2327 high-performance silicon germanium (SiGe) receiver front-end ICs set a new industry standard forlow noise and high linearity at a low supply current. This family integrates a variety of unique features such as an LO frequency

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters, inverters, switching regulators, motor control systems and switching applications.

2.5-A SENSITIVE GATE SILICON TRIACS

[GE SOLID STATE] 2.5A Sensitive Gate Triacs For AC Power Switching

2.5-A SENSITIVE GATE SILICON TRIACS

[GE SOLID STATE] 2.5A Sensitive Gate Triacs For AC Power Switching