2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Trench Power MOSFET  (P-CH)

DUAL T1/E1 TRANSFORMERS FOR INFINEON FALC IC APPLICATIONS

[UNIVERSAL MICROELECTRONICS CO.,LTD.] Electrical Specifications at 25 °C : 1. Turns Ratio : 1CT:2.4CT±2 @15.75KHz 1Vrms.PIN(1-2-3):(16-15-14) 1CT:1CT±2 @15.75KHz 1Vrms.PIN(6-7-8):(11-10-9) 2. Pri. Inductance : 1.5mH Typ. @100KHz 20mVrms. 3. Interwinding Capacitance : 35pF Max. @100KHz 1Vr

2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorable stabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorable stabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage

2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorable stabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：233.66 Kbytes Page：5 Pages

Trench Power MOSFET  (P-CH)

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：233.66 Kbytes Page：5 Pages

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：233.66 Kbytes Page：5 Pages

P-Channel 20-V (D-S) MOSFET

文件：1.03815 Mbytes Page：9 Pages

2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：185.51 Kbytes Page：4 Pages

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：185.51 Kbytes Page：4 Pages

1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed

Vibrating level switch

The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt

SOT-23 Plastic-Encapsulate MOSFETS

文件：5.03147 Mbytes Page：5 Pages

-2.8A竊?20V P-CHANNEL MOSFET

文件：111.41 Kbytes Page：4 Pages

10V P-Channel Enhanced MOS FET

文件：171.02 Kbytes Page：3 Pages