2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Trench Power MOSFET  (P-CH)

DUAL T1/E1 TRANSFORMERS FOR INFINEON FALC IC APPLICATIONS

[UNIVERSAL MICROELECTRONICS CO.,LTD.] Electrical Specifications at 25 °C : 1. Turns Ratio : 1CT:2.4CT±2 @15.75KHz 1Vrms.PIN(1-2-3):(16-15-14) 1CT:1CT±2 @15.75KHz 1Vrms.PIN(6-7-8):(11-10-9) 2. Pri. Inductance : 1.5mH Typ. @100KHz 20mVrms. 3. Interwinding Capacitance : 35pF Max. @100KHz 1Vr

2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

The UTC UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorable stabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. • Very High Density Cell Design for Low On-Resistance \n• Very Good Thermal and Electrical Capabilities;

2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorable stabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage

2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorable stabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorable stabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：233.66 Kbytes Page：5 Pages

Trench Power MOSFET  (P-CH)

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：233.66 Kbytes Page：5 Pages

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：233.66 Kbytes Page：5 Pages

P-Channel 20-V (D-S) MOSFET

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：185.51 Kbytes Page：4 Pages

Silicon NPN Transistor High Voltage Horizontal Output

Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin

Reflective Photosensor

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PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件：225.65 Kbytes Page：14 Pages

PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件：225.65 Kbytes Page：14 Pages

EXCALIBUR 3-STATE-OUTPUT WIDE-BANDWIDTH POWER OPERATIONAL AMPLIFIER

文件：324.91 Kbytes Page：22 Pages