120A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC UT120N03 is a N-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UT120N03 is generally applied in DC to DC convertors or synchronous rectifications. FEATURES * ID

Trench Power MOSFET  (N-CH)

The UTC UT120N03 is a N-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and superior switching performance.   The UTC UT120N03 is generally applied in DC to DC convertorsor synchronous rectifications. • ID = 120A \n• VDS=30V \n• RDS(ON)=3.8mΩ @ VGS=10V \n• Low Gate Charge (Typical 54nC) \n• Fast Switching \n• 100% Avalanche Tested \n• High Power and Current Handling Capability;

120A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC UT120N03 is a N-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UT120N03 is generally applied in DC to DC convertors or synchronous rectifications. FEATURES * ID

120A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC UT120N03 is a N-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UT120N03 is generally applied in DC to DC convertors or synchronous rectifications. FEATURES * ID

OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc

丝印代码：120N03MS；OptiMOS?? M-Series Power-MOSFET

文件：387.25 Kbytes Page：10 Pages

丝印代码：HMS120N03D；N-Channel Super Trench Power MOSFET

文件：579.02 Kbytes Page：6 Pages

Switching (30V, 12A)

文件：59.46 Kbytes Page：4 Pages