ULTRAFAST RECOVERY RECTIFIER

Features · Low profile space · Ideal for automated placement · Glass passivated chip junction · Low forward voltage drop · Low leakage current · High forward surge capability · High temperature soldering : 260℃ / 10 seconds at terminals · Component in accordance to RoHS 2002/95/1 and WEE

1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE

Low Profile 1.08mm Max. Case Height Glass Passivated Die Construction Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Ultra-Fast Recovery Time Ideally Suited for Automatic Assembly Plastic Material – UL Recognition Flammability Classification 94V-0

ULTRAFAST RECOVERY RECTIFIER

Features · The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 · Ideal for printed circuit board · Glass passivated junction chip · Low reverse leakage · High forward surge current capability · High temperature soldering guaranteed 260 /10 seconds at term

超快速恢复整流器

SMALL SURFACE MOUNT ULTRA FAST DIODES

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SMALL SURFACE MOUNT FAST DIODES

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1 Amp Ultra Fast Recovery

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1.0A Ultra Fast Recovery Rectifier

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1.0A GLASS PASSIVATED ULTRAFAST RECOVERY DIODE

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1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE

Low Profile 1.08mm Max. Case Height Glass Passivated Die Construction Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Ultra-Fast Recovery Time Ideally Suited for Automatic Assembly Plastic Material – UL Recognition Flammability Classification 94V-0

封装/外壳：SOD-123F 包装：剪切带（CT）带盒（TB） 描述：SOD-123FL, ULTRA 分立半导体产品 二极管 - 整流器 - 单

Ultra Fast Recovery Rectifier

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp