GaAs INTEGRATED CIRCUIT

FEATURES • Supply voltage : VDD = 2.8 to 3.2 V (3.0 V TYP.) • Control voltage : Vcont (H) = 1.5 to VDD (VDD TYP.) : Vcont (L) = 0 to 0.2 V (0 V TYP.) • Low insertion loss : Lins1 = 0.8 dB TYP. @ f = 2.3 to 2.7 GHz, VDD = 3.0 V, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins2 = 1.0 dB TYP. @ f = 3.

GaAs INTEGRATED CIRCUIT HIGH POWER DP4T SWITCH FOR WiMAX

文件：715.51 Kbytes Page：10 Pages

GaAs INTEGRATED CIRCUIT HIGH POWER DP4T SWITCH FOR WiMAX

High Power Dp4T Switch For Wimax

GaAs INTEGRATED CIRCUIT

FEATURES • Supply voltage : VDD = 2.8 to 3.2 V (3.0 V TYP.) • Control voltage : Vcont (H) = 1.5 to VDD (VDD TYP.) : Vcont (L) = 0 to 0.2 V (0 V TYP.) • Low insertion loss : Lins1 = 0.8 dB TYP. @ f = 2.3 to 2.7 GHz, VDD = 3.0 V, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins2 = 1.0 dB TYP. @ f = 3.

GaAs INTEGRATED CIRCUIT

FEATURES • Supply voltage : VDD = 2.8 to 3.2 V (3.0 V TYP.) • Control voltage : Vcont (H) = 1.5 to VDD (VDD TYP.) : Vcont (L) = 0 to 0.2 V (0 V TYP.) • Low insertion loss : Lins1 = 0.8 dB TYP. @ f = 2.3 to 2.7 GHz, VDD = 3.0 V, Vcont (H) = 3.0 V, Vcont (L) = 0 V : Lins2 = 1.0 dB TYP. @ f = 3.

Front End Components for, LNAs for L to C-Band Applications

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封装/外壳：20-UFQFN 裸露焊盘 包装：卷带（TR） 描述：IC RF SWITCH DP4T 3.8GHZ 20RQFN RF/IF，射频/中频和 RFID 射频开关

GaAs INTEGRATED CIRCUIT HIGH POWER DP4T SWITCH FOR WiMAX

文件：715.51 Kbytes Page：10 Pages

GaAs INTEGRATED CIRCUIT HIGH POWER DP4T SWITCH FOR WiMAX

文件：715.51 Kbytes Page：10 Pages

封装/外壳：20-UFQFN 裸露焊盘 包装：卷带（TR） 描述：IC RF SWITCH DP4T 3.8GHZ 20RQFN RF/IF，射频/中频和 RFID 射频开关