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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MOSINTEGRATEDCIRCUIT Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   | |
36M-BITQDRTMIISRAM2-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM2-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM2-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM2-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM2-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM2-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM2-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM2-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM2-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSINTEGRATEDCIRCUIT Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSINTEGRATEDCIRCUIT Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSINTEGRATEDCIRCUIT Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM4-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM2-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM4-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM4-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM4-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM2-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM4-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM2-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM4-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM4-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM4-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM2-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRTMIISRAM4-WORDBURSTOPERATION Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(15x17) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSINTEGRATEDCIRCUIT Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSINTEGRATEDCIRCUIT Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSINTEGRATEDCIRCUIT Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRIISRAM2-WORDBURSTOPERATION 文件：357.7 Kbytes Page：32 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
36M-BITQDRIISRAM2-WORDBURSTOPERATION 文件：357.7 Kbytes Page：32 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRIISRAM4-WORDBURSTOPERATION 文件：377.8 Kbytes Page：36 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRIISRAM4-WORDBURSTOPERATION 文件：377.8 Kbytes Page：36 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
36M-BITQDRIISRAM4-WORDBURSTOPERATION 文件：377.8 Kbytes Page：36 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
UPD4432518产品属性
- 类型
描述
- 型号
UPD4432518
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
23+ |
NA |
1014 |
专业电子元器件供应链正迈科技特价代理QQ1304306553 |
|||
RENESAS |
BGA |
6000 |
原装现货,长期供应,终端可账期 |
||||
RENESAS/瑞萨 |
2020+ |
BGA |
420 |
原装现货,优势渠道订货假一赔十 |
|||
RENESAS |
1135+ |
BGA |
91 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
2023+ |
BGA |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENESAS |
1733+ |
BGA |
6528 |
只做进口原装正品假一赔十! |
|||
RENESAS |
BGA |
90000 |
公司只做集团化配单-有更多数量-免费送样-原包装正品 |
||||
RENESAS/瑞萨 |
23+ |
BGA |
15000 |
一级代理原装现货 |
|||
RENESAS |
21+ |
BGA |
65200 |
一级代理/放心采购 |
|||
RENESAS/瑞萨 |
22+ |
BGA |
2897 |
只做原装自家现货供应! |
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UPD4432518规格书下载地址
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DdatasheetPDF页码索引
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