SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

Description ThisproductisDualN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationofnotebookcomputers,andLi-ionbatteryapplication. Features •DualMOSFETchipsinsmallpackage •2.5Vgatedrivetypeandlowon-resistance RDS(on)1=23mΩ(MAX.)(VGS

MOSFIELDEFFECTTRANSISTOR

Description ThisproductisDualN-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationof notebookcomputers,andLi-ionbatteryapplication. Features •DualMOSFETchipsinsmallpackage •2.5Vgatedrivetypeandlowon-resistance RDS(on)1=23mΩ(MAX.)(VG

BipolarTransistor30V,0.7A,LowVCE(sat)NPNDualCPH6

BipolarTransistor 30V,0.7A,LowVCE(sat)NPNDualCPH6 Features •Small-sizedpackagewithtwoNPNtransistors(30C02CHequivalency)containedinonepackage •VCEO=30V,IC=0.7A •LowCollector-to-EmitterSaturationVoltageVCE(sat)=85mV(typ.)@IC=0.2A •High-speedswitchingtf=40ns(typ.)@I

800MHzto1.5GHzDirectConversionQuadratureDemodulator

文件：194.9 Kbytes Page：12 Pages

Stand-Alone,Switch-ModeLiBatteryChargerwithInternal14VSwitch

文件：218.32 Kbytes Page：17 Pages

FullyAssembledandTested

文件：153.71 Kbytes Page：5 Pages

Stand-Alone,Switch-ModeLiBatteryChargerwithInternal14VSwitch

文件：828.96 Kbytes Page：17 Pages