SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Description This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. Features • Dual MOS FET chips in small package • 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX.) (VGS

MOS FIELD EFFECT TRANSISTOR

Description This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. Features • Dual MOS FET chips in small package • 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX.) (VG

Bipolar Transistor 30V, 0.7A, Low VCE(sat) NPN Dual CPH6

Bipolar Transistor 30V, 0.7A, Low VCE(sat) NPN Dual CPH6 Features • Small-sized package with two NPN transistors (30C02CH equivalency) contained in one package • VCEO=30V, IC=0.7A • Low Collector-to-Emitter Saturation Voltage VCE(sat)=85mV(typ.)@IC=0.2A • High-speed switching tf=40ns(typ.)@I

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