UN1210晶体管资料

  • UN1210别名:UN1210三极管、UN1210晶体管、UN1210晶体三极管

  • UN1210生产厂家:日本松下公司

  • UN1210制作材料:Si-N+R

  • UN1210性质:开关管 (S)

  • UN1210封装形式:直插封装

  • UN1210极限工作电压:50V

  • UN1210最大电流允许值:0.5A

  • UN1210最大工作频率:<1MHZ或未知

  • UN1210引脚数:3

  • UN1210最大耗散功率:0.6W

  • UN1210放大倍数

  • UN1210图片代号:A-68

  • UN1210vtest:50

  • UN1210htest:999900

  • UN1210atest:0.5

  • UN1210wtest:0.6

  • UN1210代换 UN1210用什么型号代替:AA1L4Z,DTC144TS,KSR1012,2SC3899,

型号 功能描述 生产厂家 企业 LOGO 操作
UN1210

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board

Panasonic

松下

UN1210

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board

Panasonic

松下

UN1210

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● UNR1210(UN1210) × 2 elemen

Panasonic

松下

UN1210

Surface Single Gas Discharge Tube

Features Non-Radioactive ROHS compliant Ultra low capacitance (

UNSEMI

优恩半导体

UN1210

Surface Mount 2-Electrode Gas Discharge Tube

文件:523.95 Kbytes Page:4 Pages

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

Surface Single Gas Discharge Tube

Features Non-Radioactive ROHS compliant Ultra low capacitance (

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

Surface Single Gas Discharge Tube

Features Non-Radioactive ROHS compliant Ultra low capacitance (

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

Surface Single Gas Discharge Tube

Features Non-Radioactive ROHS compliant Ultra low capacitance (

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

Surface Single Gas Discharge Tube

Features Non-Radioactive ROHS compliant Ultra low capacitance (

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

Surface Single Gas Discharge Tube

Features Non-Radioactive ROHS compliant Ultra low capacitance (

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

Surface Single Gas Discharge Tube

Features Non-Radioactive ROHS compliant Ultra low capacitance (

UNSEMI

优恩半导体

Surface Single Gas Discharge Tube

Features Non-Radioactive ROHS compliant Ultra low capacitance (

UNSEMI

优恩半导体

Surface Single Gas Discharge Tube

Features Non-Radioactive ROHS compliant Ultra low capacitance (

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

Surface Single Gas Discharge Tube

Features Non-Radioactive ROHS compliant Ultra low capacitance (

UNSEMI

优恩半导体

N-Channel Enhancement Mode MOSFET

Feature SGT MOSFET Technology 100% Avalanche Tested Reliable and Rugged RoHS compliant Applications DC/DC Converter Battery Management System High power inverter system Industrial and Motor Drive applications

UNSEMI

优恩半导体

MULTILAYER CHIP VARISTORS

Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection

UNSEMI

优恩半导体

过压保护元件

UNSEMI

优恩半导体

过压保护元件

UNSEMI

优恩半导体

陶瓷气体放电管

SOCAY

硕凯股份

Surface Mount 2-Electrode Gas Discharge Tube (GDT)

文件:523.95 Kbytes Page:4 Pages

UNSEMI

优恩半导体

Surface Mount 2-Electrode Gas Discharge Tube

文件:523.95 Kbytes Page:4 Pages

UNSEMI

优恩半导体

Surface Mount 2-Electrode Gas Discharge Tube (GDT)

文件:208.19 Kbytes Page:4 Pages

SOCAY

硕凯股份

Surface Mount 2-Electrode Gas Discharge Tube

文件:523.95 Kbytes Page:4 Pages

UNSEMI

优恩半导体

Surface Mount 2-Electrode Gas Discharge Tube (GDT)

文件:523.95 Kbytes Page:4 Pages

UNSEMI

优恩半导体

Surface Mount 2-Electrode Gas Discharge Tube (GDT)

文件:208.19 Kbytes Page:4 Pages

SOCAY

硕凯股份

Surface Mount 2-Electrode Gas Discharge Tube

文件:523.95 Kbytes Page:4 Pages

UNSEMI

优恩半导体

Surface Mount 2-Electrode Gas Discharge Tube (GDT)

文件:523.95 Kbytes Page:4 Pages

UNSEMI

优恩半导体

Surface Mount 2-Electrode Gas Discharge Tube (GDT)

文件:208.19 Kbytes Page:4 Pages

SOCAY

硕凯股份

Surface Mount 2-Electrode Gas Discharge Tube

文件:523.95 Kbytes Page:4 Pages

UNSEMI

优恩半导体

Surface Mount 2-Electrode Gas Discharge Tube (GDT)

文件:523.95 Kbytes Page:4 Pages

UNSEMI

优恩半导体

Surface Mount 2-Electrode Gas Discharge Tube (GDT)

文件:208.19 Kbytes Page:4 Pages

SOCAY

硕凯股份

Surface Mount 2-Electrode Gas Discharge Tube (GDT)

文件:208.19 Kbytes Page:4 Pages

SOCAY

硕凯股份

Surface Mount 2-Electrode Gas Discharge Tube

文件:523.95 Kbytes Page:4 Pages

UNSEMI

优恩半导体

Surface Mount 2-Electrode Gas Discharge Tube (GDT)

文件:523.95 Kbytes Page:4 Pages

UNSEMI

优恩半导体

Surface Mount 2-Electrode Gas Discharge Tube

文件:523.95 Kbytes Page:4 Pages

UNSEMI

优恩半导体

Surface Mount 2-Electrode Gas Discharge Tube (GDT)

文件:208.19 Kbytes Page:4 Pages

SOCAY

硕凯股份

Surface Mount 2-Electrode Gas Discharge Tube (GDT)

文件:523.95 Kbytes Page:4 Pages

UNSEMI

优恩半导体

Surface Mount 2-Electrode Gas Discharge Tube

文件:523.95 Kbytes Page:4 Pages

UNSEMI

优恩半导体

Surface Mount 2-Electrode Gas Discharge Tube (GDT)

文件:523.95 Kbytes Page:4 Pages

UNSEMI

优恩半导体

UN1210产品属性

  • 类型

    描述

  • 型号

    UN1210

  • 制造商

    PANASONIC

  • 制造商全称

    Panasonic Semiconductor

  • 功能描述

    Silicon NPN epitaxial planer transistor

更新时间:2025-10-30 18:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UN
24+
SMD
900000
原装进口特价
硕凯
1921
DO-214AC
5000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UN
23+
NA
7825
原装正品!清仓处理!
PANASONIC/松下
23+
TO92
9800
全新原装现货,假一赔十
Panasonic
25+23+
Sot-323
27758
绝对原装正品全新进口深圳现货
23+
TO-92L
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
优恩半导体
21+
DIP
300
全新原装鄙视假货
硕凯
24+
DO-214AC
5000
全新原装正品,现货销售
Panasonic/松下
24+
SOT-323
9200
新进库存/原装
25+
SMD
7500
绝对原装自家现货!真实库存!欢迎来电!

UN1210数据表相关新闻