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UN1210晶体管资料
UN1210别名:UN1210三极管、UN1210晶体管、UN1210晶体三极管
UN1210生产厂家:日本松下公司
UN1210制作材料:Si-N+R
UN1210性质:开关管 (S)
UN1210封装形式:直插封装
UN1210极限工作电压:50V
UN1210最大电流允许值:0.5A
UN1210最大工作频率:<1MHZ或未知
UN1210引脚数:3
UN1210最大耗散功率:0.6W
UN1210放大倍数:
UN1210图片代号:A-68
UN1210vtest:50
UN1210htest:999900
- UN1210atest:0.5
UN1210wtest:0.6
UN1210代换 UN1210用什么型号代替:AA1L4Z,DTC144TS,KSR1012,2SC3899,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UN1210 | Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board | Panasonic 松下 | ||
UN1210 | Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board | Panasonic 松下 | ||
UN1210 | Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● UNR1210(UN1210) × 2 elemen | Panasonic 松下 | ||
UN1210 | Surface Single Gas Discharge Tube Features Non-Radioactive ROHS compliant Ultra low capacitance ( | UNSEMI 优恩半导体 | ||
UN1210 | Surface Mount 2-Electrode Gas Discharge Tube 文件:523.95 Kbytes Page:4 Pages | UNSEMI 优恩半导体 | ||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
Surface Single Gas Discharge Tube Features Non-Radioactive ROHS compliant Ultra low capacitance ( | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
Surface Single Gas Discharge Tube Features Non-Radioactive ROHS compliant Ultra low capacitance ( | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
Surface Single Gas Discharge Tube Features Non-Radioactive ROHS compliant Ultra low capacitance ( | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
Surface Single Gas Discharge Tube Features Non-Radioactive ROHS compliant Ultra low capacitance ( | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
Surface Single Gas Discharge Tube Features Non-Radioactive ROHS compliant Ultra low capacitance ( | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
Surface Single Gas Discharge Tube Features Non-Radioactive ROHS compliant Ultra low capacitance ( | UNSEMI 优恩半导体 | |||
Surface Single Gas Discharge Tube Features Non-Radioactive ROHS compliant Ultra low capacitance ( | UNSEMI 优恩半导体 | |||
Surface Single Gas Discharge Tube Features Non-Radioactive ROHS compliant Ultra low capacitance ( | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
Surface Single Gas Discharge Tube Features Non-Radioactive ROHS compliant Ultra low capacitance ( | UNSEMI 优恩半导体 | |||
N-Channel Enhancement Mode MOSFET Feature SGT MOSFET Technology 100% Avalanche Tested Reliable and Rugged RoHS compliant Applications DC/DC Converter Battery Management System High power inverter system Industrial and Motor Drive applications | UNSEMI 优恩半导体 | |||
MULTILAYER CHIP VARISTORS Feature Varistor Voltage from 12 V to 470 V Fast response time Low leakage current High surge current ability Bidirectional clamping, high energy Wide Operating temperature range from -55℃-125℃ Suitable for ESD protection | UNSEMI 优恩半导体 | |||
过压保护元件 | UNSEMI 优恩半导体 | |||
过压保护元件 | UNSEMI 优恩半导体 | |||
陶瓷气体放电管 | SOCAY 硕凯股份 | |||
Surface Mount 2-Electrode Gas Discharge Tube (GDT) 文件:523.95 Kbytes Page:4 Pages | UNSEMI 优恩半导体 | |||
Surface Mount 2-Electrode Gas Discharge Tube 文件:523.95 Kbytes Page:4 Pages | UNSEMI 优恩半导体 | |||
Surface Mount 2-Electrode Gas Discharge Tube (GDT) 文件:208.19 Kbytes Page:4 Pages | SOCAY 硕凯股份 | |||
Surface Mount 2-Electrode Gas Discharge Tube 文件:523.95 Kbytes Page:4 Pages | UNSEMI 优恩半导体 | |||
Surface Mount 2-Electrode Gas Discharge Tube (GDT) 文件:523.95 Kbytes Page:4 Pages | UNSEMI 优恩半导体 | |||
Surface Mount 2-Electrode Gas Discharge Tube (GDT) 文件:208.19 Kbytes Page:4 Pages | SOCAY 硕凯股份 | |||
Surface Mount 2-Electrode Gas Discharge Tube 文件:523.95 Kbytes Page:4 Pages | UNSEMI 优恩半导体 | |||
Surface Mount 2-Electrode Gas Discharge Tube (GDT) 文件:523.95 Kbytes Page:4 Pages | UNSEMI 优恩半导体 | |||
Surface Mount 2-Electrode Gas Discharge Tube (GDT) 文件:208.19 Kbytes Page:4 Pages | SOCAY 硕凯股份 | |||
Surface Mount 2-Electrode Gas Discharge Tube 文件:523.95 Kbytes Page:4 Pages | UNSEMI 优恩半导体 | |||
Surface Mount 2-Electrode Gas Discharge Tube (GDT) 文件:523.95 Kbytes Page:4 Pages | UNSEMI 优恩半导体 | |||
Surface Mount 2-Electrode Gas Discharge Tube (GDT) 文件:208.19 Kbytes Page:4 Pages | SOCAY 硕凯股份 | |||
Surface Mount 2-Electrode Gas Discharge Tube (GDT) 文件:208.19 Kbytes Page:4 Pages | SOCAY 硕凯股份 | |||
Surface Mount 2-Electrode Gas Discharge Tube 文件:523.95 Kbytes Page:4 Pages | UNSEMI 优恩半导体 | |||
Surface Mount 2-Electrode Gas Discharge Tube (GDT) 文件:523.95 Kbytes Page:4 Pages | UNSEMI 优恩半导体 | |||
Surface Mount 2-Electrode Gas Discharge Tube 文件:523.95 Kbytes Page:4 Pages | UNSEMI 优恩半导体 | |||
Surface Mount 2-Electrode Gas Discharge Tube (GDT) 文件:208.19 Kbytes Page:4 Pages | SOCAY 硕凯股份 | |||
Surface Mount 2-Electrode Gas Discharge Tube (GDT) 文件:523.95 Kbytes Page:4 Pages | UNSEMI 优恩半导体 | |||
Surface Mount 2-Electrode Gas Discharge Tube 文件:523.95 Kbytes Page:4 Pages | UNSEMI 优恩半导体 | |||
Surface Mount 2-Electrode Gas Discharge Tube (GDT) 文件:523.95 Kbytes Page:4 Pages | UNSEMI 优恩半导体 |
UN1210产品属性
- 类型
描述
- 型号
UN1210
- 制造商
PANASONIC
- 制造商全称
Panasonic Semiconductor
- 功能描述
Silicon NPN epitaxial planer transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UN |
24+ |
SMD |
900000 |
原装进口特价 |
|||
硕凯 |
1921 |
DO-214AC |
5000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
UN |
23+ |
NA |
7825 |
原装正品!清仓处理! |
|||
PANASONIC/松下 |
23+ |
TO92 |
9800 |
全新原装现货,假一赔十 |
|||
Panasonic |
25+23+ |
Sot-323 |
27758 |
绝对原装正品全新进口深圳现货 |
|||
23+ |
TO-92L |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
优恩半导体 |
21+ |
DIP |
300 |
全新原装鄙视假货 |
|||
硕凯 |
24+ |
DO-214AC |
5000 |
全新原装正品,现货销售 |
|||
Panasonic/松下 |
24+ |
SOT-323 |
9200 |
新进库存/原装 |
|||
25+ |
SMD |
7500 |
绝对原装自家现货!真实库存!欢迎来电! |
UN1210芯片相关品牌
UN1210规格书下载地址
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DdatasheetPDF页码索引
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