PIN DIODE

DESCRIPTION The UM7000 and UM7100 series offer moderately high power handling in combination with reasonably low levels of both series resistance and capacitance. The UM7200 series offers the lowest series resistance, but the highest capacitance of the group. The differences in specified performa

RoHS Compliant Versions Available

DESCRIPTION The UM7000 and UM7100 series offer moderately high power handling in combination with reasonably low levels of both series resistance and capacitance. The UM7200 series offers the lowest series resistance, but the highest capacitance of the group. The differences in specified performa

Average power dissipation to 10 W

DESCRIPTION The UM7000 and UM7100 series offer moderately high power handling in combination with reasonably low levels of both series resistance and capacitance. The UM7200 series offers the lowest series resistance, but the highest capacitance of the group. The differences in specified performa

HF-UHF Medium & High Power PIN Diodes

The UM7000 and UM7100 series offer moderately high power handling in combination with reasonably low levels of both series resistance and capacitance. The UM7200 series offers the lowest series resistance but the highest capacitance of the group. The differences in specified performance for each of

HIGH POWER PIN DIODES

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Product Change Notification

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Product Change Notification

文件：2.81601 Mbytes Page：221 Pages

Product Change Notification

文件：2.81601 Mbytes Page：221 Pages

Product Change Notification

文件：2.81601 Mbytes Page：221 Pages

封装/外壳：接线柱 包装：卷带（TR） 描述：SI PPIN HERMETIC STUD 分立半导体产品 二极管 - 射频

Product Change Notification

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Product Change Notification

文件：2.81601 Mbytes Page：221 Pages

Product Change Notification

文件：2.81601 Mbytes Page：221 Pages

封装/外壳：SQ-MELF 包装：卷带（TR） 描述：SI PPIN HERMETIC MELF 分立半导体产品 二极管 - 射频

70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES

Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, hig

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

LOW-POWER DUAL C-MOS OPERATIONAL AMPLIFIER???

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LOW-POWER TINY SINGLE C-MOS OPERATIONAL AMPLIFIER?

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LOW-POWER DUAL C-MOS OPERATIONAL AMPLIFIER???

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