N-Ch 100V Fast Switching MOSFETs

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N-Channel MOSFET uses advanced trench technology

文件：1.20162 Mbytes Page：4 Pages

N-Ch 100V Fast Switching MOSFETs

N-Ch 100V Fast Switching MOSFETs

2.0 to 20.0 GHz GaAs MMIC 1W Power Amplifer

General Description Mimix Broadband’s distributed 2.0-22.0 GHz GaAs MMIC power amplifier has a small signal gain of 10.0 dB with a +30.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to

EUROPEAN APPLICANTIONS FOR RF 403 CORDLESS TELEPHONE FRONT END RFIC

A front end RFIC for cordless telephone applications has been developed for use in the 902MHz to 928MHz ISM (Industrial-Scientific-Medical) band in the United States under Part 15 of the FCC Rules. Potential applications for this RFIC in this frequency band include cordless telephones, wireless LA

2.0-20.0 GHz GaAs MMIC 1W Power Amplifier

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Ka Band Connectorised Amplifier: 24 - 30 GHz

文件：90.75 Kbytes Page：2 Pages

80535 CPU CARD

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