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UM_5价格
参考价格:¥1654.7055
型号:UM35-F 品牌:Microtran 备注:这里有UM_5多少钱,2024年最近7天走势,今日出价,今日竞价,UM_5批发/采购报价,UM_5行情走势销售排行榜,UM_5报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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THREE SIREN SOUND GENERATOR GeneralDescription TheUM3561isalow-cost,low-powerCMOSLSIdesignedforuseintoyapplications.Sincetheintegratedcircuitincludesoscillatorandselectorcircuits,acompactsoundmodulecanbeconstructedwithonlyafewadditionalcomputers.TheUM3561contrainsaprogrammedmaskROM | UMC 联华电子公司 | |||
CARACTERISTICAS DESCRIPCIONESGENERALES. ElUM3561,esunintegradodebajoconsumodeingenieríaCMOSLSIdiseñadoparaserutilizadoenaplicacionesdejuegos.ELcircuitointegradoincluyeuncircuitooscilador-selector,demaneraqueelmódulodesonidocompactopuedeserconstruidoconpocoscomponenteadic | UMC 联华电子公司 | |||
THREE SIREN SOUND GENERATOR GeneralDescription TheUM3561isalow-cost,low-powerCMOSLSIdesignedforuseintoyapplications.Sincetheintegratedcircuitincludesoscillatorandselectorcircuits,acompactsoundmodulecanbeconstructedwithonlyafewadditionalcomputers.TheUM3561contrainsaprogrammedmaskROM | UMC 联华电子公司 | |||
MONOLITHIC CRYSTAL FILTER (UM-1, UM-5) FEATURES: LOWIMPEDANCE COMPACTNESSANDLIGHTWEIGHT STABLETEMPERATURECHARACTERISTICS OUTSTANDINGVIBRATIONANDSHOCKRESISTANTCHARACTERISTICS | TranskoTransko electrinics inc Transko electrinics inc | |||
MONOLITHIC CRYSTAL FILTER (UM-1, UM-5) FEATURES: LOWIMPEDANCE COMPACTNESSANDLIGHTWEIGHT EXCELLENTDESIGNAGAINSTSHOCK/VIBRATION OPERATESSTABLYEVENINWIDETEMPERATURERANGE | TranskoTransko electrinics inc Transko electrinics inc | |||
PIN DIODE DESCRIPTION TheUM7500seriesfeaturesMicrosemi’sinnovativepassivatedchipdesignwhichtakesadvantageofthelatestsiliconwaferbondingandjunctionpassivationtechniques.ThisnewseriesofPINdiodesincorporatesallofthedesirableRFpropertiesofpreviousMicrosemidiodesplusextre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
PIN DIODE DESCRIPTION TheUM7500seriesfeaturesMicrosemi’sinnovativepassivatedchipdesignwhichtakesadvantageofthelatestsiliconwaferbondingandjunctionpassivationtechniques.ThisnewseriesofPINdiodesincorporatesallofthedesirableRFpropertiesofpreviousMicrosemidiodesplusextre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
PIN DIODE DESCRIPTION TheUM7500seriesfeaturesMicrosemi’sinnovativepassivatedchipdesignwhichtakesadvantageofthelatestsiliconwaferbondingandjunctionpassivationtechniques.ThisnewseriesofPINdiodesincorporatesallofthedesirableRFpropertiesofpreviousMicrosemidiodesplusextre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
PIN DIODE DESCRIPTION TheUM7500seriesfeaturesMicrosemi’sinnovativepassivatedchipdesignwhichtakesadvantageofthelatestsiliconwaferbondingandjunctionpassivationtechniques.ThisnewseriesofPINdiodesincorporatesallofthedesirableRFpropertiesofpreviousMicrosemidiodesplusextre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
PIN DIODE DESCRIPTION TheUM7500seriesfeaturesMicrosemi’sinnovativepassivatedchipdesignwhichtakesadvantageofthelatestsiliconwaferbondingandjunctionpassivationtechniques.ThisnewseriesofPINdiodesincorporatesallofthedesirableRFpropertiesofpreviousMicrosemidiodesplusextre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
PIN DIODE DESCRIPTION TheUM7500seriesfeaturesMicrosemi’sinnovativepassivatedchipdesignwhichtakesadvantageofthelatestsiliconwaferbondingandjunctionpassivationtechniques.ThisnewseriesofPINdiodesincorporatesallofthedesirableRFpropertiesofpreviousMicrosemidiodesplusextre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
PIN DIODE DESCRIPTION TheUM7500seriesfeaturesMicrosemi’sinnovativepassivatedchipdesignwhichtakesadvantageofthelatestsiliconwaferbondingandjunctionpassivationtechniques.ThisnewseriesofPINdiodesincorporatesallofthedesirableRFpropertiesofpreviousMicrosemidiodesplusextre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
PIN DIODE DESCRIPTION TheUM7500seriesfeaturesMicrosemi’sinnovativepassivatedchipdesignwhichtakesadvantageofthelatestsiliconwaferbondingandjunctionpassivationtechniques.ThisnewseriesofPINdiodesincorporatesallofthedesirableRFpropertiesofpreviousMicrosemidiodesplusextre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
PIN DIODE DESCRIPTION TheUM7500seriesfeaturesMicrosemi’sinnovativepassivatedchipdesignwhichtakesadvantageofthelatestsiliconwaferbondingandjunctionpassivationtechniques.ThisnewseriesofPINdiodesincorporatesallofthedesirableRFpropertiesofpreviousMicrosemidiodesplusextre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
PIN DIODE ATTENUATOR Description TheUM9552isaverylongminoritycarrierlifetime(70mstypical)PINDIODEthathasbeendevelopedforlowHForLFBandAttenuatorApplications.TheyhavebeenevaluatedforattenuatorlinearityanddistortioncharacteristicsinaBridgeTeeAttenuatorCircuitat455KHz(thecomm | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V DESCRIPTION These500watttransientvoltagesuppressorsoffercapabilitiesonlyfoundinlargerpackages.TheyareusedforprotectingagainstavarietyoftransientsfrominductiveswitchingenvironmentsorlowerlevelsofinducedsecondarylightningeffectsofIEC61000-4-5.Itoffersthesame | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V DESCRIPTION These500watttransientvoltagesuppressorsoffercapabilitiesonlyfoundinlargerpackages.TheyareusedforprotectingagainstavarietyoftransientsfrominductiveswitchingenvironmentsorlowerlevelsofinducedsecondarylightningeffectsofIEC61000-4-5.Itoffersthesame | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V DESCRIPTION These500watttransientvoltagesuppressorsoffercapabilitiesonlyfoundinlargerpackages.TheyareusedforprotectingagainstavarietyoftransientsfrominductiveswitchingenvironmentsorlowerlevelsofinducedsecondarylightningeffectsofIEC61000-4-5.Itoffersthesame | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V DESCRIPTION These500watttransientvoltagesuppressorsoffercapabilitiesonlyfoundinlargerpackages.TheyareusedforprotectingagainstavarietyoftransientsfrominductiveswitchingenvironmentsorlowerlevelsofinducedsecondarylightningeffectsofIEC61000-4-5.Itoffersthesame | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V DESCRIPTION These500watttransientvoltagesuppressorsoffercapabilitiesonlyfoundinlargerpackages.TheyareusedforprotectingagainstavarietyoftransientsfrominductiveswitchingenvironmentsorlowerlevelsofinducedsecondarylightningeffectsofIEC61000-4-5.Itoffersthesame | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V DESCRIPTION These500watttransientvoltagesuppressorsoffercapabilitiesonlyfoundinlargerpackages.TheyareusedforprotectingagainstavarietyoftransientsfrominductiveswitchingenvironmentsorlowerlevelsofinducedsecondarylightningeffectsofIEC61000-4-5.Itoffersthesame | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V DESCRIPTION These500watttransientvoltagesuppressorsoffercapabilitiesonlyfoundinlargerpackages.TheyareusedforprotectingagainstavarietyoftransientsfrominductiveswitchingenvironmentsorlowerlevelsofinducedsecondarylightningeffectsofIEC61000-4-5.Itoffersthesame | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V DESCRIPTION These500watttransientvoltagesuppressorsoffercapabilitiesonlyfoundinlargerpackages.TheyareusedforprotectingagainstavarietyoftransientsfrominductiveswitchingenvironmentsorlowerlevelsofinducedsecondarylightningeffectsofIEC61000-4-5.Itoffersthesame | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
Emitter common (dual digital transistors) Features 1)TwoDTA123JchipsinaEMTorUMTorSMTpackage. 2)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFACE,DRIVER | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Emitter common Dual digital transistors Features 1)TwoDTA123JchipsinaEMTorUMTorSMTpackage. 2)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFACE,DRIVER | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Features 1)TwoDTA123JchipsinaEMTorUMTorSMTpackage. 2)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFACE,DRIVER | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
General purpose (dual digital transistors) Generalpurpose(dualdigitaltransistors) Features 1)TwoDTA124EchipsinaUMTorSMTpackage. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Dual Common Base-Collector Bias Resistor Transistors DualCommonBase−CollectorBiasResistorTransistors NPNandPNPSiliconSurfaceMountTransistorswithMonolithicBiasResistorNetwork TheBiasResistorTransistor(BRT)containsasingletransistorwithamonolithicbiasnetworkconsistingoftworesistors;aseriesbaseresistorandabase−e | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features •EpitaxialPlanarDieConstruction •SurfaceMountPackageSuitedforAutomatedAssembly •SimplifiesCircuitDesignandReducesBoardSpace •LeadFree,RoHSCompliant(Note1) •HalogenandAntimonyFreeGreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability | DIODESDiodes Incorporated 达尔科技 | |||
Power management Features 1)BoththeDTA143XchipandDTC144EchipinaEMT orUMTorSMTpackage. 2)Idealforpowerswitchcircuits. 3)Mountingcostandareacanbecutinhalf. Structure Epitaxialplanartype NPN/PNPsilicontransistor(Built-inresistortype.) | TGS Tiger Electronic Co.,Ltd | |||
NPNPNP DUAL DIGITAL TRANSISTORS Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •BoththeDTA143XandDTC144EchipsinaSOT-353package •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivity | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
EPITAXIAL PLANAR NPNPNP Dual Digital Transistor Features ●IncludingtwodevicesinUSV. (UltraSuperminitypewith5leads.) ●WithBuilt-inbiasresistors. ●Simplifycircuitdesign. ●Reduceaquantityofpartsandmanufacturingprocess. ●Wedeclarethatthematerialofproduct compliancewithRoHSrequirements. | FS First Silicon Co., Ltd | |||
Dual Digital Transistor DualDigitalTransistor(NPN+PNP) FEATURES ●BoththeDTA143XandDTC144EchipsinaSOT-353package ●Idealforpowerswitchcircuits ●Mountingcostandareacanbecutinhalf | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features •EpitaxialPlanarDieConstruction •SurfaceMountPackageSuitedforAutomatedAssembly •SimplifiesCircuitDesignandReducesBoardSpace •LeadFree,RoHSCompliant(Note1) •HalogenandAntimonyFreeGreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability | DIODESDiodes Incorporated 达尔科技 | |||
DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features -Ultra-SmallSurfaceMountPackage -SurfaceMountPackageSuitedforAutomatedAssembly -SimplifiesCircuitDesignandReducesBoardSpace -TotallyLead-Free&FullyRoHSCompliant(Notes1&2) -HalogenandAntimonyFree.“Green”Device(Note3) -QualifiedtoAEC-Q101Standar | DIODESDiodes Incorporated 达尔科技 | |||
DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features -Ultra-SmallSurfaceMountPackage -SurfaceMountPackageSuitedforAutomatedAssembly -SimplifiesCircuitDesignandReducesBoardSpace -TotallyLead-Free&FullyRoHSCompliant(Notes1&2) -HalogenandAntimonyFree.“Green”Device(Note3) -QualifiedtoAEC-Q101Standar | DIODESDiodes Incorporated 达尔科技 | |||
Dual Common Base-Collector Bias Resistor Transistors DualCommonBase−CollectorBiasResistorTransistors NPNandPNPSiliconSurfaceMountTransistorswithMonolithicBiasResistorNetwork TheBiasResistorTransistor(BRT)containsasingletransistorwithamonolithicbiasnetworkconsistingoftworesistors;aseriesbaseresistorandabase−e | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Dual Common Base-Collector Bias Resistor Transistors DualCommonBase−CollectorBiasResistorTransistors NPNandPNPSiliconSurfaceMountTransistorswithMonolithicBiasResistorNetwork TheBiasResistorTransistor(BRT)containsasingletransistorwithamonolithicbiasnetworkconsistingoftworesistors;aseriesbaseresistorandabase−e | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Dual Common Base-Collector Bias Resistor Transistors TheBiasResistorTransistor(BRT)containsasingletransistorwith amonolithicbiasnetworkconsistingoftworesistors;aseriesbase resistorandabase−emitterresistor.Thesedigitaltransistorsare designedtoreplaceasingledeviceanditsexternalresistorbias network.TheBRTelim | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Dual Common Base-Collector Bias Resistor Transistors DualCommonBase−CollectorBiasResistorTransistors NPNandPNPSiliconSurfaceMountTransistorswithMonolithicBiasResistorNetwork TheBiasResistorTransistor(BRT)containsasingletransistorwithamonolithicbiasnetworkconsistingoftworesistors;aseriesbaseresistorandabase−e | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Dual Common Base-Collector Bias Resistor Transistors DualCommonBase−CollectorBiasResistorTransistors NPNandPNPSiliconSurfaceMountTransistorswithMonolithicBiasResistorNetwork TheBiasResistorTransistor(BRT)containsasingletransistorwithamonolithicbiasnetworkconsistingoftworesistors;aseriesbaseresistorandabase−e | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Dual Common Base-Collector Bias Resistor Transistors DualCommonBase−CollectorBiasResistorTransistors NPNandPNPSiliconSurfaceMountTransistorswithMonolithicBiasResistorNetwork TheBiasResistorTransistor(BRT)containsasingletransistorwithamonolithicbiasnetworkconsistingoftworesistors;aseriesbaseresistorandabase−e | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Dual Common Base-Collector Bias Resistor Transistors TheBiasResistorTransistor(BRT)containsasingletransistorwith amonolithicbiasnetworkconsistingoftworesistors;aseriesbase resistorandabase−emitterresistor.Thesedigitaltransistorsare designedtoreplaceasingledeviceanditsexternalresistorbias network.TheBRTelim | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Power management (dual transistors) 2SA2018andDTC144EEarehousedindependentlyinaUMTpackage. Features 1)Powerswitchingcircuitinasinglepackage. 2)Mountingcostandareacanbecutinhalf. Application Powermanagementcircuit Structure Siliconepitaxialplanartransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
DUAL TRANSISTOR (PNPNPN) DUALTRANSISTOR(PNP+NPN) FEATURES ●2SA2018andDTC144Earehousedindependentlyinapackage. ●MountingpossiblewithSOT-363automaticmountingmachines. ●Transistorelementsareindependent,eliminatinginterference. ●Mountingcostandareabecutinhalf | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
General purpose (dual digital transistors) Features 1)TwoDTC124EchipsinaEMTorUMTorSMTpackage. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
General purpose (dual digital transistors) Features 1)TwoDTC124EchipsinaEMTorUMTorSMTpackage. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIUML5isDesignedforHighPowerClassCAmplifierin,225to400MHzMilitaryCommunicationEquipment. FEATURES: •ClassCOperation •PG=10dBat5.0W/400MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | |||
Power management Features 1)BoththeDTA143XchipandDTC144EchipinaEMT orUMTorSMTpackage. 2)Idealforpowerswitchcircuits. 3)Mountingcostandareacanbecutinhalf. Structure Epitaxialplanartype NPN/PNPsilicontransistor(Built-inresistortype.) | TGS Tiger Electronic Co.,Ltd | |||
High transition frequency (dual transistors) Features 1)Two2SC3838KchipsinaEMTorUMTorSMTpackage. 2)Hightransitionfrequency.(fT=3.2GHz) 3)Lowoutputcapacitance.(Cob=0.9pF) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
High transition frequency (dual transistors) Features 1)Two2SC3838KchipsinaEMTorUMTorSMTpackage. 2)Hightransitionfrequency.(fT=3.2GHz) 3)Lowoutputcapacitance.(Cob=0.9pF) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
High transition frequency (dual transistors) Features 1)Two2SC3838KchipsinaEMTorUMTorSMTpackage. 2)Hightransitionfrequency.(fT=3.2GHz) 3)Lowoutputcapacitance.(Cob=0.9pF) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Zener diodes Features 1)UltraSmallmoldtype.(UMD4) 2)Highreliability Applications Constantvoltagecontrol | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Zener diodes Features 1)UltraSmallmoldtype.(UMD4) 2)Highreliability Applications Constantvoltagecontrol | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Zener diodes Features 1)UltraSmallmoldtype.(UMD4) 2)Highreliability Applications Constantvoltagecontrol | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Zener diodes Features 1)UltraSmallmoldtype.(UMD4) 2)Highreliability Applications Constantvoltagecontrol | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Zener diodes Features 1)UltraSmallmoldtype.(UMD4) 2)Highreliability Applications Constantvoltagecontrol | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Zener diodes Features 1)UltraSmallmoldtype.(UMD4) 2)Highreliability Applications Constantvoltagecontrol | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Zener Diode Features 1)UltraSmallmoldtype.(UMD4) 2)Highreliability Applications Constantvoltagecontrol | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Zener diodes Features 1)UltraSmallmoldtype.(UMD4) 2)Highreliability Applications Constantvoltagecontrol | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |
UM_5产品属性
- 类型
描述
- 型号
UM_5
- 功能描述
UM1500 SERIES, 15 to 20 Watt DC-DC Converters
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
UTMC |
1844+ |
DIP |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
|||
UMC |
23+ |
DIP8 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
UMC |
23+ |
DIP8 |
50000 |
全新原装正品现货,支持订货 |
|||
UCM |
DIP |
13500 |
16余年资质 绝对原盒原盘 更多数量 |
||||
23+ |
N/A |
30650 |
正品授权货源可靠 |
||||
UMC |
2023+ |
DIP-8 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
UMC |
23+ |
DIP |
1520 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
UMC |
2020+ |
DIP-8 |
16800 |
绝对原装进口现货,假一赔十,价格优势! |
|||
UCM |
23+ |
DIP |
868800 |
只做原装正品,欢迎来电咨询! |
|||
UMC |
2023+ |
DIP-8 |
16800 |
芯为科技只有原装 |
UM_5规格书下载地址
UM_5参数引脚图相关
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- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80