| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UHF power LDMOS transistor DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el | PHILIPS 飞利浦 | |||
UHF power transistor DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou | PHILIPS 飞利浦 | |||
SWITCHMODE?? Power Rectifiers SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E | MOTOROLA 摩托罗拉 | |||
SWITCHMODE??Schottky Power Rectifirer SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use | MOTOROLA 摩托罗拉 | |||
SCHOTTKY BARRIER RECTIFIERS(20A,30-45V) SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara | MOSPEC 统懋 |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
General Purpose NPN Transistor Arrays | INTERSIL | INTERSIL | ||
General Purpose NPN Transistor Arrays | INTERSIL | INTERSIL | ||
General Purpose NPN Transistor Arrays | INTERSIL | INTERSIL | ||
General Purpose NPN Transistor Array | INTERSIL | INTERSIL | ||
General Purpose NPN Transistor Array | INTERSIL | INTERSIL | ||
General Purpose NPN Transistor Array | INTERSIL | INTERSIL | ||
General Purpose NPN Transistor Array | INTERSIL | INTERSIL | ||
LM3045/LM3046/LM3086 Transistor Arrays | NSC 国半 | NSC | ||
LM3045/LM3046/LM3086 Transistor Arrays | NSC 国半 | NSC | ||
LM3045/LM3046/LM3086 Transistor Arrays | NSC 国半 | NSC | ||
Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair) | NTE | NTE | ||
TRANSISTOR ARRAY | ETC1 | ETC1 | ||
TRANSISTOR ARRAY | ETC1 | ETC1 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
35 |
220 |
ONSEMI/安森美 |
7 |
92 |
|||
ONSEMI/安森美 |
20+ |
TO-220 |
4958 |
原装现货 价格优势 |
|||
TSC/台湾半导体 |
25+ |
TO-220 |
20300 |
TSC/台湾半导体原装特价MBR2045CT即刻询购立享优惠#长期有货 |
|||
ON |
23+ |
TO-220 |
65400 |
||||
VISHAY |
10+ |
200 |
TO-220-3 |
||||
扬杰 |
25+ |
TO-220AB |
10000 |
扬杰原厂一级代理商,价格优势! |
|||
ON |
24+ |
TO-220 |
15800 |
绝对原装现货,价格低,欢迎询购! |
|||
DIODES/美台 |
2021+ |
TO-220 |
9000 |
原装现货,随时欢迎询价 |
|||
DIODES |
16+ |
to-220 |
30000 |
原装正品供应B |
|||
ON(安森美) |
2511 |
TO-220-3 |
4945 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
ULS2045H规格书下载地址
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