HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAY

Integrating seven high-voltage, high-current npn Darlingtons into a monolithic power array, the ULN7003A AND ULN7003LW are designed for interfacing between TTL or CMOS logic and a variety of peripheral loads. The seven open-collector Darlington outputs are specified for 135 V minimum breakdown and

TRI-BAND GSM/DCS/PCS LNA

DESCRIPTION The STB7003 is a tri-band LNA designed for GSM/DCS/ PCS applications. The GC pin sets the LNA gain levels. The innovative architecture implemented allows to reach very low current consumption. LNA1 works at 0.9-1.0 GHz and LNA2 over the 1.8-2GHz frequency range. • SUPPLY VOLTAGE 2.8V

MicroPower, Ultra-sensitive Hall Effect Switch

GENERAL DESCRIPTION MA7003 is a three-terminal Hall Effect sensor device with an output driver. The device is using CMOS process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to provide switching hysteresis

TRI-BAND GSM/DCS/PCS LNA

DESCRIPTION The STB7003 is a tri-band LNA designed for GSM/DCS/ PCS applications. The GC pin sets the LNA gain levels. The innovative architecture implemented allows to reach very low current consumption. LNA1 works at 0.9-1.0 GHz and LNA2 over the 1.8-2GHz frequency range. • SUPPLY VOLTAGE 2.8V

MOSFET POWER AMPLIFIER

文件：134.44 Kbytes Page：8 Pages

MOSFET POWER AMPLIFIER

文件：134.44 Kbytes Page：8 Pages