4 AMP ULTRAFAST RECOVERY DIODES

文件：141.11 Kbytes Page：2 Pages

General Purpose Diode

The UTC UFR40120 is a superfast recovery rectifier, it uses UTC’sadvanced technology to provide customers with low forward voltagedrop, low leakage, high current capability and high surge capabilityetc. These characteristics make it ideal for heavy duty applicationsthat demand long term reliability. Ultrafast, soft recovery Very low conduction and switching losses High frequency and or high pulsed current operation High reverse voltage capability High junction temperature;

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages