23A, 250V N-CHANNEL POWER MOSFET

The UTC UFP254 is an N-channel mode Power FET, it uses UTC’s advanced technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. • RDS(ON)<140m? @ VGS=10V,ID=14A \n• Low Gate Charge (Maximum 140nC) \n• High Switching Speed;

23A, 250V N-CHANNEL POWER MOSFET

文件：132.49 Kbytes Page：3 Pages

23A, 250V N-CHANNEL POWER MOSFET

文件：132.49 Kbytes Page：3 Pages

23A, 250V N-CHANNEL POWER MOSFET

文件：132.49 Kbytes Page：3 Pages

N-channel enhancement mode vertical D-MOS transistors

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT54 (TO-92) variant package. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown • Low RDSon. APPLICATIONS • Line current interruptor in telephone sets • Relay, high-speed a

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit