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型号	功能描述	生产厂家企业	LOGO
UF830	ULTRA FAST RECOVERY RECTIFIER Ultra Fast Recovery Rectifiers • Ultra Fast Recovery Rectifier • 175°C Junction Temperature • VRRM 300 TO 500 Volts • 8 Amps current rating • tRR 50 nsec maximum	MICROSEMI 美高森美	MICROSEMI
UF830	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830	4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. • 4.5A, 500V, RDS(ON)=1.5Ω \n• Single Pulse Avalanche Energy Rated \n• Rugged- SOA is Power Dissipation Limited \n• Fast Switching Speeds \n• Linear Transfer Characteristics \n• High Input Impedance;	UTC 友顺	UTC
UF830-E	4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. • RDS(ON)=1.5Ω@ VGS=10V, ID=2.5A \n• Rugged- SOA is Power Dissipation Limited \n• Linear Transfer Characteristics \n• High Input Impedance;	UTC 友顺	UTC
UF830-F	4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET The N-Channel enhancement mode silicon gate power MOSFETis designed for high voltage, high speed power switchingapplications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers. • RDS(ON)<1.5Ω @ VGS=10V\n• Rugged- SOA is Power Dissipation Limited\n• Linear Transfer Characteristics\n• High Input Impedance;	UTC 友顺	UTC
UF830G-T2Q-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830G-TA3-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830G-TF1-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830G-TF2-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830G-TF3-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830G-TM3-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830G-TN3-R	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830G-TQ2-R	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830G-TQ2-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830K	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TA3-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TA3-T	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TF1-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TF2-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TF2-T	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TF3-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TF3-T	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TF3T-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TM3-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TMS2-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TMS4-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TMS-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TN3-R	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TN3-R	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TND-R	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TA3-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TA3-T	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TF1-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TF2-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TF2-T	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TF3-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TF3-T	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TF3T-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TM3-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TMS2-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TMS4-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TMS-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TN3-R	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TN3-R	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TND-R	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830K-MT	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830L-T2Q-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830L-TA3-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830L-TF1-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830L-TF2-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830L-TF3-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830L-TM3-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830L-TN3-R	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830L-TQ2-R	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830L-TQ2-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830Z	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and related drivers. FEATURES * VDS = 500V * ID = 4.5A * RDS(ON)=1.5Ω * Sing	UTC 友顺	UTC
UF830ZG-TF3-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and related drivers. FEATURES * VDS = 500V * ID = 4.5A * RDS(ON)=1.5Ω * Sing	UTC 友顺	UTC
UF830ZL-TF3-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and related drivers. FEATURES * VDS = 500V * ID = 4.5A * RDS(ON)=1.5Ω * Sing	UTC 友顺	UTC
UF830_15	N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：321.09 Kbytes Page：9 Pages	UTC 友顺	UTC
UF830-E	N-CHANNEL POWER MOSFET 文件：321.22 Kbytes Page：8 Pages	UTC 友顺	UTC

UF830产品属性

类型
描述
Vdss(V)：
500
Vgss(V)：
30
Id(A)：
4.5
Package：
TO-220TO-220FTO-...

UF830供应商更多...

更新时间：2026-7-24 17:28:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	UF830L-TN3-R	UTC/友顺	25+	TO252	55000	UTC/友顺UF830L-TN3-R即刻询购立享优惠#长期有货	询价
深圳市福田区绿盛电子商行	UF830L-TA3-T	UTC	2018+		26976	代理原装现货/特价热卖!	询价
深圳市英科美电子有限公司	UF830L-TN3-R	UTC/友顺	2223+	TO-252	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳市明嘉莱科技有限公司	UF830L-F	UTC/友顺	25+	TO-252	880000	明嘉莱只做原装正品现货	询价
富凯科技(深圳）有限公司	UF830L-TF3-T	UTC/友顺	24+	NA	8000	只做原装，欢迎询价，量大价优	询价
深圳市华斯顿科技有限公司	UF830L	UTC	25+23+	TO-252	50355	绝对原装正品现货,全新深圳原装进口现货	询价
深圳市昌和盛利电子有限公司	UF830	UTC	26+	TO-251	9526	代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订	询价
千层芯半导体(深圳)有限公司	UF830L	UTC	24+	TO220F	6000	深圳原装现货价格优势	询价
深圳市亿联芯电子科技有限公司	UF830L-TA3-T	UTC/友顺	26+	SMD	23100	全新原装正品,优势价格	询价
深圳市毅创腾电子科技有限公司	UF830L	UTC	23+	TO252	4200	绝对全新原装!优势供货渠道!特价!请放心订购!	询价

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找IC，尽在114IC

UF830产品属性

UF830供应商更多...

UF830芯片相关品牌

UF830规格书下载地址

UF830参数引脚图相关

UF830数据表相关新闻

UFG1C221MPM1TD

UF9Z24L-TO252R-TGF_UTC代理商

UF830L-TO220FT-TG

UF730L-TO252R-TG

UF80A12-BTHR

UF5404

DdatasheetPDF页码索引