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型号	功能描述	生产厂家企业	LOGO
UF830	ULTRA FAST RECOVERY RECTIFIER Ultra Fast Recovery Rectifiers • Ultra Fast Recovery Rectifier • 175°C Junction Temperature • VRRM 300 TO 500 Volts • 8 Amps current rating • tRR 50 nsec maximum	Microsemi 美高森美	Microsemi
UF830	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830	4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET	UTC 友顺	UTC
UF830G-T2Q-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830G-TA3-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830G-TF1-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830G-TF2-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830G-TF3-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830G-TM3-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830G-TN3-R	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830G-TQ2-R	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830G-TQ2-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830K	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TA3-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TA3-T	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TF1-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TF2-T	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TF2-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TF3-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TF3-T	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TF3T-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TM3-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TMS2-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TMS4-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TMS-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TN3-R	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TN3-R	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KG-TND-R	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TA3-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TA3-T	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TF1-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TF2-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TF2-T	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TF3-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TF3-T	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TF3T-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TM3-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TMS2-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TMS4-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TMS-T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TN3-R	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TN3-R	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830KL-TND-R	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830K-MT	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)	UTC 友顺	UTC
UF830L-T2Q-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830L-TA3-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830L-TF1-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830L-TF2-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830L-TF3-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830L-TM3-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830L-TN3-R	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830L-TQ2-R	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830L-TQ2-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)=1.5Ω * Single Pulse Avalanche Energy Rated	UTC 友顺	UTC
UF830Z	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and related drivers. FEATURES * VDS = 500V * ID = 4.5A * RDS(ON)=1.5Ω * Sing	UTC 友顺	UTC
UF830ZG-TF3-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and related drivers. FEATURES * VDS = 500V * ID = 4.5A * RDS(ON)=1.5Ω * Sing	UTC 友顺	UTC
UF830ZL-TF3-T	4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and related drivers. FEATURES * VDS = 500V * ID = 4.5A * RDS(ON)=1.5Ω * Sing	UTC 友顺	UTC
UF830_15	N-CHANNEL MOSFET ARRAY FOR SWITCHING 文件：321.09 Kbytes Page：9 Pages	UTC 友顺	UTC
UF830-E	N-CHANNEL POWER MOSFET 文件：321.22 Kbytes Page：8 Pages	UTC 友顺	UTC
UF830-E	4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET	UTC 友顺	UTC
UF830-F	4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET	UTC 友顺	UTC

UF830产品属性

类型
描述
型号
UF830
制造商
MICROSEMI
制造商全称
Microsemi Corporation
功能描述
ULTRA FAST RECOVERY RECTIFIER

UF830供应商更多...

更新时间：2025-11-22 15:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市安富世纪电子有限公司	UF830	UTC/友顺	20+	TO-220	7500	现货很近!原厂很远!只做原装	询价
艾睿（深圳）半导体有限公司	UF830L-TF3-T	UTC(友顺)	2447	TO-220F(TO-220IS)	115000	50个/管一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市亿联芯电子科技有限公司	UF830L-TA3-T	UTC/友顺	2023+	SMD	23100	全新原装正品,优势价格	询价
深圳市中联芯电子有限公司	UF830L	UTC/友顺	24+	TO-220	12000	原装正品真实现货杜绝虚假	询价
深圳市联世界科技有限公司	UF830L-TA3-T	UTC	24+/25+	TO-220AB	30700	原装正品现货库存价优	询价
千层芯半导体(深圳)有限公司	UF830L	UTC	24+	TO220F	6000	深圳原装现货价格优势	询价
深圳市纳艾斯科技有限公司	UF830L-TA3-T	U	24+	TO-220	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市华斯顿科技有限公司	UF830L	UTC	25+23+	TO-252	50355	绝对原装正品现货,全新深圳原装进口现货	询价
中天科工半导体（深圳）有限公司	UF830L-TN3-R	UTC/友顺	25+	TO252	55000	UTC/友顺UF830L-TN3-R即刻询购立享优惠#长期有货	询价
深圳市卓越微芯电子有限公司	UF830KL-TN3-R	UTC	25+	TO-252(ML1)	20000	原装正品价格优惠,志同道合共谋发展	询价

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2023-10-23
UF9Z24L-TO252R-TGF_UTC代理商
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2023-2-8
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2023-2-1
UF730L-TO252R-TG
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2023-1-31
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2021-9-26
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UF5404，当天发货0755-82732291全新原装现货或门市自取.
2020-8-16

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UF830产品属性

UF830供应商更多...

UF830芯片相关品牌

UF830规格书下载地址

UF830参数引脚图相关

UF830数据表相关新闻

UFG1C221MPM1TD

UF9Z24L-TO252R-TGF_UTC代理商

UF830L-TO220FT-TG

UF730L-TO252R-TG

UF80A12-BTHR

UF5404

DdatasheetPDF页码索引