RF Power MOSFET Transistor 5W, 100-500 MHz, 28V

RF Power MOSFET Transistor 5W, 100-500 MHz, 28V Features  N-channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  Common source configuration  Lower noise floor  100 MHz to 500 MHz operation

RF MOSFET Power Transistor, 5W, 28V 100 - 500 MHz

Features • N-Channel Enhancement Mode Device • DUOS Structure • Lower Capacitances for Broadband Operation • Common Source Configuration • Lower Noise Floor • 100 MHz to 500 MHz Operation

1 RF Power MOSFET Transistor 5W, 100-500 MHz, 28V

·N-Channel Enhancement Mode Device\n·100 MHz to 500 MHz Operation\n·Lower Noise Floor\n·Common Source Configuration\n·Lower Capacitances for Broadband Operation\n·DMOS Structure;

RF Power MOSFET Transistor

文件：213.04 Kbytes Page：3 Pages

RF Power MOSFET Transistor

RF Power MOSFET Transistor 5W, 100-500 MHz, 28V Features  N-channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  Common source configuration  Lower noise floor  100 MHz to 500 MHz operation

RF Power MOSFET Transistor

文件：213.04 Kbytes Page：3 Pages

HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP PHOTOCOUPLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

EIGHT DARLINGTON ARRAYS

Description The ULQ2801A-ULQ2804A each contain eight Darlington transistors with common emitters and integral suppression diodes for inductive loads. Each Darlington features a peak load current rating of 600 mA (500 mA continuous) and can withstand at least 50 V in the off state. Outputs may be

Low-Power BiCMOS Current-Mode PWM

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Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages