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UF1680

ULTRA FAST RECOVERY RECTIFIER

Ultra Fast Recovery Rectifiers ● Ultra Fast Recovery Rectifiers ● 175°C Junction Temperature ● 16 Amp current rating ● VRRM 600 to 800 Volts ● trr 70ns maximum

MICROSEMI

美高森美

UF1680

Ultra Fast Rectifiers

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MICROSEMI

美高森美

Ultra Fast

FORMOSA

美丽微半导体

Integrated Circuit High Speed, 6 Diode Array, Common Anode

Description: The NTE1680 is a common anode monolithic array of high speed switching diodes in a 7–Lead SIP type package. Features: ● High Speed Switching Time: trr = 4.0ns Typ. ● Low Capacitance: Ct = 5.0pf TYP. ● Small Size Enables High Density Mounting

NTE

16 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 16.0 Amperes)

FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound ● Exceeds environmental standards of MIL-S-19500/228 ● Low power loss, high efficiency ● Low forward voltage, high current capability ● High surge capacity

PANJIT

強茂

D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 16.0 Amperes)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MILS-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge

PANJIT

強茂

16A ISOLATION SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring for Transient Protection ● Low Forward Voltage Drop ● Low Reverse Leakage Current ● High Surge Current Capability ● Plastic Material has UL Flammability Classification 94V-O

WTE

Won-Top Electronics

RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS

DESCRIPTION The SD1680 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. ■ 915 - 960 MHz ■ 24 VOLTS ■ CLASS AB PUSH PULL ■ INTERNAL INPUT MATCHING ■ DESIGNED FOR H

STMICROELECTRONICS

意法半导体

UF1680产品属性

  • 类型

    描述

  • VRRM(V):

    800

  • VR(V):

    800

  • IO(A):

    16

  • IFSM(A):

    125

  • VF(V) Max.:

    1.7

  • IF(A):

    8

  • IR(μA) Max:

    5

  • IR(μA)Max_VR(V):

    800

  • trr(ns)Max.@RG1:

    75

  • trr(ns)Max.@RG1_IF(A):

    0.5

  • trr(ns)Max.@RG1_IR(A):

    1

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