GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.5 Amperes)

FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● Glass passivated junction in DO-15 package ● 1.5 ampere operation at TA=55 ¢J with no thermal runaway ● Exceeds environmental standards of MIL-S

Glass Passivated Ultra Fast Recovery Rectifier

Voltage Range 50 to 1000 V Current 1.5 Ampere Features ♦ Low forward voltage drop ♦ Fast switching for high efficiency ♦ High current capability ♦ High surge current capability ♦ Low reverse leakge current

ULTRAFAST GLASS PASSIVATION RECTI FIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes

VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • Void-free Plastic in DO-15 package • 1.5 ampere operation at TA=55 OC J with no thermal runaway

1.5A GLASS PASSIVATED ULTRAFAST DIODE

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GLASS PASSIVATED JUNCTION ULTRAFAST RECOVERY RECTIFIERS

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GLASS PASSIVATED JUNCTION ULTRAFAST RECOVERY RECTIFIERS

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封装/外壳：DO-204AC，DO-15，轴向 包装：卷带（TR）剪切带（CT） 描述：GLASS PASSIVATED JUNCTION ULTRAF 分立半导体产品 二极管 - 整流器 - 单

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

Silicon epitaxial planar type

Features 1. Short reverse recovery time trr 2. Small terminal capacitance, Ct

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

L-BAND SPDT SWITCH

DESCRIPTION The PPG152TA is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in as original 6 pin mini-mold that is smalle