1.5A ULTRA-FAST RECTIFIER

Features and Benefits • Diffused Junction • Ultra-Fast Switching for High Efficiency • Surge Overload Rating to 50A Peak • Low Reverse Leakage Current • Lead Free Finish, RoHS Compliant (Note 1)

1.5AMP. Ultrafast Rectifiers竊뉷PP竊

VOLTAGE:50 TO 1000V CURRENT:1.5A Specification Features: ▪ Case: Epoxy, Molded ▪ Weight: 0.4Gram (Approximately) ▪ High current capability, Low leakage current ▪ High surge current capability ▪ Finish: All External Surfaces Corrosion Resistant And Terminal Leads Are Readily Solderable ▪

ULTRA FAST RECTIFIERS (DO-15)

REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes FEATURES ● Low cost ● Diffused junction ● Ultra fast switching for high efficiency ● Low reverse leakage current ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0

1.5A ULTRA-FAST RECTIFIER

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ULTRA FAST RECTIFIERS (DO-41)

文件：38.55 Kbytes Page：2 Pages

ULTRA FAST RECTIFIERS

文件：56.02 Kbytes Page：2 Pages

1.5A ULTRA-FAST RECTIFIER

Features and Benefits • Diffused Junction • Ultra-Fast Switching for High Efficiency • Surge Overload Rating to 50A Peak • Low Reverse Leakage Current • Lead Free Finish, RoHS Compliant (Note 1)

1.5A ULTRA-FAST RECTIFIER

文件：369.84 Kbytes Page：3 Pages

1.5A ULTRA-FAST RECTIFIER

文件：85.83 Kbytes Page：4 Pages

ultra fast rectifier

1.5A ULTRA-FAST RECTIFIER

文件：85.83 Kbytes Page：4 Pages

1.5A ULTRA-FAST RECTIFIER

文件：85.83 Kbytes Page：4 Pages

1.5A ULTRA-FAST RECTIFIER

文件：85.83 Kbytes Page：4 Pages

1.5A ULTRA-FAST RECTIFIER

文件：369.84 Kbytes Page：3 Pages

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and col

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and col

LATERAL NCHANNEL BROADBAND RF POWER MOSFET

The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment. • Specified Performance @ 520

3/ 6/ 9/ 12 / 15 / 18 VOICE ROM

Description The MSSnn07 is a single-chip CMOS VLSI ROM that can memorize voice data up to nn seconds using MOSEL qualified coding method (5-bit MPCM) at 6.00 KHz in 32 sections with arbitrary length. Both the volume and pitch can be masked and different for each entry each sentence. 5 versatile

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor High breakdown voltage and for low noise amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.