ULTRA FAST RECOVERY RECTIFIERS

● Ultra Fast Recovery ● 175°C Junction Temperature ● VRRM 100 to 200 Volts ● 1 Amp Current Rating ● tRR 30ns Max.

ULTRA FAST RECOVERY RECTIFIER

● Ultra Fast Recovery ● 175°C Junction Temperature ● VRRM 100 to 200 Volts ● 1 Amp Current Rating ● tRR 30ns Max.

1A Ultra Fast Recovery Rectifier

This Ultra Fast Recovery Rectifier is packaged in DO-41 package, which has a maximum forward current of 1A.\n\n Available as High Reliability device per MIL-PRF-19500, indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

ULTRA FAST RECOVERY RECTIFIERS

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ULTRA FAST RECOVERY RECTIFIER

Ultra Fast Recovery Rectifier ● Ultra fast recovery ● 175°C junction temperature ● VRRM 100 to 200 volts ● 1 Amp current rating ● tRR 30nS max

ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE竊?200V CURRENT竊?1.0A

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UltraFast Die-Planar

封装/外壳：DO-213AB，MELF（玻璃） 包装：散装 描述：UFR,FRR 分立半导体产品 二极管 - 整流器 - 单

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD

DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. APPLICATIONS Circuit for Constant Voltage, Constant Current, W

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll