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UES805

RECTIFIERS

DESCRIPTION The UES804 series of ultrafast high-efficiency rectifiers is specifically designed for operation in power switching circuits operating at frequencies of 20 kHz or higher. These devices have demonstrated capability in passing power-stress testing to 25 thousand cycles with full-rated f

MICROSEMI

美高森美

UES805

ULTRAFAST RECTIFIERS, High Efficiency, 50A

DESCRIPTION The UES804 series of ultrafast high-efficiency rectifiers is specifically designed for operation in power switching circuits operating at frequencies of 20 kHz or higher. These devices have demonstrated capability in passing power-stress testing to 25 thousand cycles with full-rated f

MICROSEMI

美高森美

UES805

RECTIFIERS

DESCRIPTION The UES804 is specifically designed for operation In power switching circuits operating at frequencies of at least 20 KHz. FEATURES • Very Low Forward Voltage (1.15V) • Very Fast Recovery Times (50nSec) • High Surge Capability • Low Thermal Resistance • Mechanically Rugged • Bo

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UES805

50A Ultra Fast Recovery Rectifier

This Ultra Fast Recovery Rectifier is packaged in DO-5 package, which has a maximum forward current of 50A.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

DIGITRON

UES805

Rectifier Diode Switching 2-Pin 50A, 300V, 50ns DO-5

The UES804 series of ultrafast high-efficiency rectifiers is specifically designed for operation in power switching circuits operating at frequencies of 20 kHz or higher. These devices have demonstrated capability in passing power-stress testing to 25 thousand cycles with full-rated forward current Very Low Forward Voltage \n Very Fast Recovery Times \n High Reliability Screening Options with HR2 Suffix (ie. UES804HR2) \n Low Thermal Resistance \n Mechanically rugged \n Standard Polarity is Cathode to Case \n For Reverse Polarity, Add Suffix R (ie. UES804R) \n High Surge capacity;

MICROCHIP

微芯科技

UES805

Diode Switching 300V 50A 2-Pin DO-5

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UES805

封装/外壳:DO-203AB,DO-5,接线柱 包装:散装 描述:RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

MICROCHIP

微芯科技

UES805

High Efficiency, 50A

文件:157.51 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RECTIFIERS

DESCRIPTION The UES804 is specifically designed for operation In power switching circuits operating at frequencies of at least 20 KHz. FEATURES • Very Low Forward Voltage (1.15V) • Very Fast Recovery Times (50nSec) • High Surge Capability • Low Thermal Resistance • Mechanically Rugged • Bo

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

ULTRAFAST RECTIFIERS, High Efficiency, 50A

DESCRIPTION The UES804 series of ultrafast high-efficiency rectifiers is specifically designed for operation in power switching circuits operating at frequencies of 20 kHz or higher. These devices have demonstrated capability in passing power-stress testing to 25 thousand cycles with full-rated f

MICROSEMI

美高森美

RECTIFIERS

DESCRIPTION The UES804 series of ultrafast high-efficiency rectifiers is specifically designed for operation in power switching circuits operating at frequencies of 20 kHz or higher. These devices have demonstrated capability in passing power-stress testing to 25 thousand cycles with full-rated f

MICROSEMI

美高森美

High Efficiency, 50A

文件:157.51 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

封装/外壳:DO-203AB,DO-5,接线柱 包装:散装 描述:RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

MICROCHIP

微芯科技

Silicon MOS IC

Silicon MOS IC ■Features ●Output MOSFET with high breakdown voltage for voltage step-up, EL driver and CMOS control circuits are integrated into one chip. ●Oscillation circuit is incorporated ●EL voltage controlled push-pull drive system achieves higher EL light intensity. (160Vp-p

PANASONIC

松下

SCR?셲

Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting

STMICROELECTRONICS

意法半导体

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

NEC

瑞萨

HIGH EFFICIENCY RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes)

文件:24.81 Kbytes Page:2 Pages

RECTRON

丽正

UES805产品属性

  • 类型

    描述

  • Peak Reverse Repetitive Voltage:

    300V

  • Peak Reverse Recovery Time:

    50ns

  • Peak Reverse Current:

    70uA

  • Peak Non-Repetitive Surge Current:

    600A

  • Peak Forward Voltage:

    1.25V

  • Minimum Operating Temperature:

    -55°C

  • Maximum Operating Temperature:

    150°C

  • Maximum Continuous Forward Current:

    50A

  • Configuration:

    Single

更新时间:2026-8-3 20:53:00
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