| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UES805 | RECTIFIERS DESCRIPTION The UES804 series of ultrafast high-efficiency rectifiers is specifically designed for operation in power switching circuits operating at frequencies of 20 kHz or higher. These devices have demonstrated capability in passing power-stress testing to 25 thousand cycles with full-rated f | MICROSEMI 美高森美 | ||
UES805 | ULTRAFAST RECTIFIERS, High Efficiency, 50A DESCRIPTION The UES804 series of ultrafast high-efficiency rectifiers is specifically designed for operation in power switching circuits operating at frequencies of 20 kHz or higher. These devices have demonstrated capability in passing power-stress testing to 25 thousand cycles with full-rated f | MICROSEMI 美高森美 | ||
UES805 | RECTIFIERS DESCRIPTION The UES804 is specifically designed for operation In power switching circuits operating at frequencies of at least 20 KHz. FEATURES • Very Low Forward Voltage (1.15V) • Very Fast Recovery Times (50nSec) • High Surge Capability • Low Thermal Resistance • Mechanically Rugged • Bo | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
UES805 | 50A Ultra Fast Recovery Rectifier This Ultra Fast Recovery Rectifier is packaged in DO-5 package, which has a maximum forward current of 50A.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish. | DIGITRON | ||
UES805 | Rectifier Diode Switching 2-Pin 50A, 300V, 50ns DO-5 The UES804 series of ultrafast high-efficiency rectifiers is specifically designed for operation in power switching circuits operating at frequencies of 20 kHz or higher. These devices have demonstrated capability in passing power-stress testing to 25 thousand cycles with full-rated forward current Very Low Forward Voltage \n Very Fast Recovery Times \n High Reliability Screening Options with HR2 Suffix (ie. UES804HR2) \n Low Thermal Resistance \n Mechanically rugged \n Standard Polarity is Cathode to Case \n For Reverse Polarity, Add Suffix R (ie. UES804R) \n High Surge capacity; | MICROCHIP 微芯科技 | ||
UES805 | Diode Switching 300V 50A 2-Pin DO-5 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
UES805 | 封装/外壳:DO-203AB,DO-5,接线柱 包装:散装 描述:RECTIFIER 分立半导体产品 二极管 - 整流器 - 单 | MICROCHIP 微芯科技 | ||
UES805 | High Efficiency, 50A 文件:157.51 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
RECTIFIERS DESCRIPTION The UES804 is specifically designed for operation In power switching circuits operating at frequencies of at least 20 KHz. FEATURES • Very Low Forward Voltage (1.15V) • Very Fast Recovery Times (50nSec) • High Surge Capability • Low Thermal Resistance • Mechanically Rugged • Bo | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
ULTRAFAST RECTIFIERS, High Efficiency, 50A DESCRIPTION The UES804 series of ultrafast high-efficiency rectifiers is specifically designed for operation in power switching circuits operating at frequencies of 20 kHz or higher. These devices have demonstrated capability in passing power-stress testing to 25 thousand cycles with full-rated f | MICROSEMI 美高森美 | |||
RECTIFIERS DESCRIPTION The UES804 series of ultrafast high-efficiency rectifiers is specifically designed for operation in power switching circuits operating at frequencies of 20 kHz or higher. These devices have demonstrated capability in passing power-stress testing to 25 thousand cycles with full-rated f | MICROSEMI 美高森美 | |||
High Efficiency, 50A 文件:157.51 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
封装/外壳:DO-203AB,DO-5,接线柱 包装:散装 描述:RECTIFIER 分立半导体产品 二极管 - 整流器 - 单 | MICROCHIP 微芯科技 | |||
Silicon MOS IC Silicon MOS IC ■Features ●Output MOSFET with high breakdown voltage for voltage step-up, EL driver and CMOS control circuits are integrated into one chip. ●Oscillation circuit is incorporated ●EL voltage controlled push-pull drive system achieves higher EL light intensity. (160Vp-p | PANASONIC 松下 | |||
SCR?셲 Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting | STMICROELECTRONICS 意法半导体 | |||
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958) | NEC 瑞萨 | |||
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958) | NEC 瑞萨 | |||
HIGH EFFICIENCY RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes) 文件:24.81 Kbytes Page:2 Pages | RECTRON 丽正 |
UES805产品属性
- 类型
描述
- Peak Reverse Repetitive Voltage:
300V
- Peak Reverse Recovery Time:
50ns
- Peak Reverse Current:
70uA
- Peak Non-Repetitive Surge Current:
600A
- Peak Forward Voltage:
1.25V
- Minimum Operating Temperature:
-55°C
- Maximum Operating Temperature:
150°C
- Maximum Continuous Forward Current:
50A
- Configuration:
Single
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MSC |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
Microchip Technology |
25+ |
DO-5(DO-203AB) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
MSC |
25+ |
MODULE |
297 |
主打螺丝模块系列 |
|||
NA |
NA |
1165 |
专营CANCDIP |
||||
MSC |
24+ |
1627 |
|||||
MSC |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
26+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Microsemi |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
MICROSEMI |
25+ |
SMD |
26 |
就找我吧!--邀您体验愉快问购元件! |
UES805芯片相关品牌
UES805规格书下载地址
UES805参数引脚图相关
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2020-5-8
DdatasheetPDF页码索引
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