丝印代码：2802EP；LOW-POWER BICMOS CURRENT-MODE PWM

Controlled Baseline − One Assembly − One Test Site − One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† ESD Protection Exceeds 200 V Using Machine M

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 5 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Good radiant power output linearity with respect to input current ● Long lifet

EIGHT DARLINGTON ARRAYS

Description The ULQ2801A-ULQ2804A each contain eight Darlington transistors with common emitters and integral suppression diodes for inductive loads. Each Darlington features a peak load current rating of 600 mA (500 mA continuous) and can withstand at least 50 V in the off state. Outputs may be