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UCC27201价格

参考价格:¥12.8419

型号:UCC27201AD 品牌:TI 备注:这里有UCC27201多少钱,2026年最近7天走势,今日出价,今日竞价,UCC27201批发/采购报价,UCC27201行情走势销售排行榜,UCC27201报价。
型号 功能描述 生产厂家 企业 LOGO 操作
UCC27201

UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

UCC27201

具有 8V UVLO 和 TTL 输入的 3A、120V 半桥栅极驱动器

The UCC2720x family of high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active clamp forwar • Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration\n• Negative Voltage Handling on HS (–5 V)\n• Maximum Boot Voltage of 120 V\n• Maximum VDD Voltage of 20 V\n• On-Chip 0.65-V VF, 0.6-Ω RD Bootstrap Diode\n• Greater than 1 MHz of Operation\n• 20-ns Propagation Delay Times\n• 3-A S;

TI

德州仪器

UCC27201

120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver

文件:922.73 Kbytes Page:28 Pages

TI

德州仪器

UCC27201

120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver

文件:1.5032 Mbytes Page:37 Pages

TI

德州仪器

UCC27201

120V Boot, 3A Peak, High Frequency, High-Side and Low-Side Driver

文件:1.7192 Mbytes Page:37 Pages

TI

德州仪器

丝印代码:UCC27201A;UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

丝印代码:UCC27201A;UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

丝印代码:UCC27201A;UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

丝印代码:UCC27201A;UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

HIGH FREQUENCY, HIGH-SIDE/LOW-SIDE DRIVER

1FEATURES • Drives Two N-Channel MOSFETs in High-Side/Low-Side Configuration • Maximum Boot Voltage • Maximum VDD Voltage • On-Chip RD Bootstrap Diode • Under Voltage Lockout for High-Side and Low-Side Driver APPLICATIONS • Power Supplies for Telecom, Datacom, and Merchant Markets • H

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

120V 升压、3A 峰值电流、高频、高侧/低侧驱动器

UCC27201A 是一款系列高频 N 通道 MOSFET 驱动器,此驱动器包括一个自举二极管和具有旨在实现最大的控制灵活性具有独立输入的高侧/低侧驱动器。 这可在半桥式、全桥式、两开关正激式和有源钳位正激式转换器中实现 N 通道 MOSFET 控制。 低侧和高侧栅极驱动器是独立控制的,并在彼此的接通和关断之间实现了至 1ns 的匹配。 UCC27201A 基于广泛使用的 UCC27201 驱动器,但进行了一些改进。 为了提升嘈杂电源环境中的性能,UCC27201A 运用了一种增强型 ESD 输入结构,而且能够在其 HS 引脚上耐受 -18V (最大值) 的电压。 • 驱动两个高端/低端配置的 N 通道金属氧化物半导体场效应晶体管 (MOSFET)\n• 最大引导电压\n• 最大 VDD 电压\n• 片载 RD 自举二极管\n• 针对高侧和低侧驱动器的欠压闭锁;

TI

德州仪器

HIGH FREQUENCY, HIGH-SIDE/LOW-SIDE DRIVER

1FEATURES • Drives Two N-Channel MOSFETs in High-Side/Low-Side Configuration • Maximum Boot Voltage • Maximum VDD Voltage • On-Chip RD Bootstrap Diode • Under Voltage Lockout for High-Side and Low-Side Driver APPLICATIONS • Power Supplies for Telecom, Datacom, and Merchant Markets • H

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–18V) • Maximum boot voltage 120V • Maximum VDD voltage 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink, 3A source output currents

TI

德州仪器

具有 8V UVLO 和负电压处理能力的汽车类 3A、120V 半桥栅极驱动器

UCC27201A-Q1 高频 N 沟道 MOSFET 驱动器由 120V 自举二极管和高侧/低侧驱动器组成,其中高侧/低侧驱动器配有独立输入,可最大限度提高控制灵活性。 这可在半桥式、全桥式、两开关正激式和有源箝位正激式转换器中提供N沟道 MOSFET 控制。 低端和高端栅极驱动器是独立控制的,并在彼此的接通和关断之间实现了至 1ns 的匹配。 UCC27201A-Q1 基于常见的 UCC27200 和 UCC27201 驱动器,但提供了一些增强功能。 UCC27201A-Q1 的 HS 引脚最高能够承受 -18V 电压,这使得其在电源噪声环境下的性能得到了改善。由于在芯片上集成了一个自举二 • 符合汽车应用要求 \n• 器件温度等级 1:-40°C 至 140°C 的环境运行温度范围\n• 器件充电器件模型 (CDM) 分类等级 C3 \n• HS 引脚具备 -18V 的负电压处理能力\n• 最大启动电压:120V\n• 片载0.65V VF, 0.6Ω RD 自举二极管\n• 20ns 传播延迟时间\n• 8ns 上升时间和 7ns 下降时间(采用 1000pF 负载时)\n• 用于高端和低端驱动器的欠压闭锁功能 \n• 采用 8 引脚 PowerPad 小尺寸集成电路 (SOIC)-8 (DDA) 封装;

TI

德州仪器

HIGH FREQUENCY, HIGH-SIDE/LOW-SIDE DRIVER

1FEATURES • Drives Two N-Channel MOSFETs in High-Side/Low-Side Configuration • Maximum Boot Voltage • Maximum VDD Voltage • On-Chip RD Bootstrap Diode • Under Voltage Lockout for High-Side and Low-Side Driver APPLICATIONS • Power Supplies for Telecom, Datacom, and Merchant Markets • H

TI

德州仪器

HIGH FREQUENCY, HIGH-SIDE/LOW-SIDE DRIVER

1FEATURES • Drives Two N-Channel MOSFETs in High-Side/Low-Side Configuration • Maximum Boot Voltage • Maximum VDD Voltage • On-Chip RD Bootstrap Diode • Under Voltage Lockout for High-Side and Low-Side Driver APPLICATIONS • Power Supplies for Telecom, Datacom, and Merchant Markets • H

TI

德州仪器

HIGH FREQUENCY, HIGH-SIDE/LOW-SIDE DRIVER

1FEATURES • Drives Two N-Channel MOSFETs in High-Side/Low-Side Configuration • Maximum Boot Voltage • Maximum VDD Voltage • On-Chip RD Bootstrap Diode • Under Voltage Lockout for High-Side and Low-Side Driver APPLICATIONS • Power Supplies for Telecom, Datacom, and Merchant Markets • H

TI

德州仪器

HIGH FREQUENCY, HIGH-SIDE/LOW-SIDE DRIVER

1FEATURES • Drives Two N-Channel MOSFETs in High-Side/Low-Side Configuration • Maximum Boot Voltage • Maximum VDD Voltage • On-Chip RD Bootstrap Diode • Under Voltage Lockout for High-Side and Low-Side Driver APPLICATIONS • Power Supplies for Telecom, Datacom, and Merchant Markets • H

TI

德州仪器

HIGH FREQUENCY, HIGH-SIDE/LOW-SIDE DRIVER

1FEATURES • Drives Two N-Channel MOSFETs in High-Side/Low-Side Configuration • Maximum Boot Voltage • Maximum VDD Voltage • On-Chip RD Bootstrap Diode • Under Voltage Lockout for High-Side and Low-Side Driver APPLICATIONS • Power Supplies for Telecom, Datacom, and Merchant Markets • H

TI

德州仪器

UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27201;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27201;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27201;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27201;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27201;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

UCC27201产品属性

  • 类型

    描述

  • Power switch:

    MOSFET

  • Input VCC (Min) (V):

    8

  • Input VCC (Max) (V):

    17

  • Peak output current (A):

    3

  • Rise time (ns):

    8

  • Operating temperature range (C):

    -40 to 140

  • Undervoltage lockout (Typ):

    8

  • Rating:

    Catalog

  • Number of channels (#):

    2

  • Fall time (ns):

    7

  • Prop delay (ns):

    20

  • Iq (uA):

    1

  • Input threshold:

    TTL

  • Channel input logic:

    TTL

  • Negative voltage handling at HS pin (V):

    -5

  • Features:

  • Driver configuration:

    Non-Inverting

更新时间:2026-7-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
N/A
18746
样件支持,可原厂排单订货!
TI
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
TI/德州仪器
25+
QFN
32360
TI/德州仪器全新特价UCC27201DRMR即刻询购立享优惠#长期有货
TI/德州仪器
2021+
SO-MOD-16
7600
原装现货,欢迎询价
TI(德州仪器)
24+/25+
10000
原装正品现货库存价优
TI
25+
SON-8
9000
原装正品 支持实单 假一罚十
TI(德州仪器)
25+
SO-MOD-16
499
全新原装
ST
26+
NA
60000
只有原装 可配单
TI
23+
VSON(DRM)-8
8000
TI优势物料,欢迎询价
ST
24+
原厂原封
2000
决对房间现货

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