| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UCC21330 | UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater than 125V/ns • Up to 25V VDD output drive supply – 5V, 8V, 12V VDD UVLO optio | TI 德州仪器 |   | |
UCC21330 | UCC21330x-Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following results – Device temperature grade 1 • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater | TI 德州仪器 | | |
UCC21330 | UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater than 125V/ns • Up to 25V VDD output drive supply – 8V VDD UVLO options • Swi | TI 德州仪器 | | |
UCC21330 | 具有禁用逻辑和可编程死区时间的 3kVRMS 4A/6A 双通道隔离式栅极驱动器 UCC21330 是具有可编程死区时间和宽温度范围的隔离式双通道栅极驱动器系列。该器件采用 4A 峰值拉电流和 6A 峰值灌电流来驱动功率 MOSFET、SiC、GaN 和 IGBT 晶体管。\n\nUCC21330 可配置为两个低侧驱动器、两个高侧驱动器或一个半桥驱动器。输入侧通过一个 5kVRMS 隔离层与两个输出驱动器相隔离，其共模瞬态抗扰度 (CMTI) 的最小值为 125V/ns。\n\n保护功能包括：电阻器可编程死区时间、同时关闭两个输出的禁用功能以及可抑制短于 5ns 的输入瞬态的集成抗尖峰脉冲滤波器。所有电源都有 UVLO 保护。\n\n凭借所有这些高级特性，UCC21330 通用：双通道低侧、双通道高侧或半桥驱动器\n \n结温范围：–40°C 至 +150°C\n \n高达 4A 峰值拉电流和 6A 峰值灌电流输出\n \n共模瞬态抗扰度 (CMTI) 大于 125V/ns\n \n高达 25V 的 VDD 输出驱动电源 \n \n8V VDD UVLO 选项\n \n\n \n开关参数： \n \n33ns 典型传播延迟\n \n5ns 最大脉宽失真\n \n10µs 最大 VDD 上电延迟\n \n\n \n针对所有电源的 UVLO 保护\n \n可针对电源时序快速禁用; | TI 德州仪器 | | |
UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater than 125V/ns • Up to 25V VDD output drive supply – 5V, 8V, 12V VDD UVLO optio | TI 德州仪器 | | ||
丝印代码：U330A；UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater than 125V/ns • Up to 25V VDD output drive supply – 5V, 8V, 12V VDD UVLO optio | TI 德州仪器 | | ||
丝印代码：U330AQ；UCC21330x-Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following results – Device temperature grade 1 • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater | TI 德州仪器 | | ||
丝印代码：U330B；UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater than 125V/ns • Up to 25V VDD output drive supply – 5V, 8V, 12V VDD UVLO optio | TI 德州仪器 | | ||
丝印代码：U330B；UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater than 125V/ns • Up to 25V VDD output drive supply – 8V VDD UVLO options • Swi | TI 德州仪器 | | ||
丝印代码：U330BQ；UCC21330x-Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following results – Device temperature grade 1 – Device HBM ESD classification level H2 – Device CDM ESD classification level C4B • Junction temperature range –40 to +150°C • Up to 4A p | TI 德州仪器 | | ||
丝印代码：U330BQ；UCC21330x-Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following results – Device temperature grade 1 • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater | TI 德州仪器 | | ||
丝印代码：U330C；UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater than 125V/ns • Up to 25V VDD output drive supply – 5V, 8V, 12V VDD UVLO optio | TI 德州仪器 | | ||
丝印代码：U330CQ；UCC21330x-Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following results – Device temperature grade 1 • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater | TI 德州仪器 | | ||
UCC21330x-Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following results – Device temperature grade 1 • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater | TI 德州仪器 | | ||
UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater than 125V/ns • Up to 25V VDD output drive supply – 5V, 8V, 12V VDD UVLO optio | TI 德州仪器 | | ||
UCC21330x-Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following results – Device temperature grade 1 – Device HBM ESD classification level H2 – Device CDM ESD classification level C4B • Junction temperature range –40 to +150°C • Up to 4A p | TI 德州仪器 | | ||
具有禁用逻辑和可编程死区时间的汽车类3kVRMS 4A/6A 双通道栅极驱动器 UCC21330-Q1 是具有可编程死区时间和宽温度范围的隔离式双通道栅极驱动器系列。该器件采用 4A 峰值拉电流和 6A 峰值灌电流来驱动功率 MOSFET、SiC、GaN 和 IGBT 晶体管。\n\nUCC21330-Q1 可配置为两个低侧驱动器、两个高侧驱动器或一个半桥驱动器。输入侧通过一个 5kVRMS 隔离层与两个输出驱动器相隔离，其共模瞬态抗扰度 (CMTI) 的最小值为 125V/ns。\n\n保护功能包括：电阻器可编程死区时间、同时关闭两个输出的禁用功能以及可抑制短于 5ns 的输入瞬态的集成抗尖峰脉冲滤波器。所有电源都有 UVLO 保护。\n\n凭借所有这些高级特性，UCC 通用：双通道低侧、双通道高侧或半桥驱动器\n \n具有符合 AEC-Q100 标准的下列特性 \n \n器件温度 1 级\n \n器件 HBM ESD 分类等级 H2\n \n器件 CDM ESD 分类等级 C4B\n \n\n \n结温范围：–40°C 至 +150°C\n \n高达 4A 峰值拉电流和 6A 峰值灌电流输出\n \n共模瞬态抗扰度 (CMTI) 大于 125V/ns\n \n高达 25V 的 VDD 输出驱动电源 \n \n8V VDD UVLO 选项\n \n\n \n开关参数： \n \n33ns 典型传播延迟\n \n5ns 最大脉宽失真\n \n10µs 最大 VD; | TI 德州仪器 | | ||
UCC21330x-Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following results – Device temperature grade 1 • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater | TI 德州仪器 | | ||
UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater than 125V/ns • Up to 25V VDD output drive supply – 8V VDD UVLO options • Swi | TI 德州仪器 | | ||
UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater than 125V/ns • Up to 25V VDD output drive supply – 5V, 8V, 12V VDD UVLO optio | TI 德州仪器 | | ||
UCC21330x-Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following results – Device temperature grade 1 • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater | TI 德州仪器 | | ||
UCC21330x-Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following results – Device temperature grade 1 – Device HBM ESD classification level H2 – Device CDM ESD classification level C4B • Junction temperature range –40 to +150°C • Up to 4A p | TI 德州仪器 | | ||
GaN Power Transistors 文件：875.81 Kbytes Page：7 Pages | RFHIC | |
UCC21330产品属性
- 类型
描述
- Isolation rating：
Basic
- Withstand isolation voltage (VISO) (Vrms)：
3000
- Transient isolation voltage (VIOTM) (VPK)：
4242
- Power switch：
IGBT
- Features：
Disable
- Output VCC/VDD (max) (V)：
25
- Output VCC/VDD (min) (V)：
13
- Input VCC (min) (V)：
3
- Input VCC (max) (V)：
5.5
- TI functional safety category：
Functional Safety-Capable
- Input threshold：
CMOS
- Operating temperature range (°C)：
-40 to 150
- Rating：
Automotive
- Fall time (ns)：
8
- Undervoltage lockout (typ) (V)：
8
- 封装：
SOIC (D)
- 引脚：
16
- 尺寸：
59.4 mm² 9.9 x 6
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
23+ |
SO-MOD-16 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
TI/德州仪器 |
20+ |
SO-MOD-16 |
5000 |
原厂原装订货诚易通正品现货会员认证企业 |
|||
TI(德州仪器) |
23+ |
N/A |
6000 |
公司只做原装，可来电咨询 |
|||
TI/德州仪器 |
22+ |
SO-MOD-16 |
20000 |
原装 品质保证 |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
||||
ST |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
ST |
25+ |
1808 |
20000 |
原装 |
|||
TI(德州仪器) |
2447 |
SO-MOD-16 |
105000 |
2000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
ST |
26+ |
原厂封装 |
9896 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
UCC21330规格书下载地址
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UCC21330数据表相关新闻
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特点 ·变压器离线电源 ·为400VDC100VDC宽允许输入范围 ·固定5VDC或可调低电压输出 ·输出200mA的水槽，来源150mA的MOSFET栅极到一个 ·用途低成本SMD电感 ·短路保护 ·可选的隔离能力 描述 UCC3888控制器的优化，为离线，低功耗，低电压，调节偏置电源。独特的电路拓扑，可以利用此装置想象成两个级联反激式转换器中的每个连续运行模式下，从一个单一的外部电源开关驱动。的显着效益这种方法是能够实现高达400V的电压转换率与无变压器内部损耗低
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特点 ·精密故障阈值 ·可编程的平均功率限制 ·可编程线性电流控制 ·可编程 ·过流限制 ·可编程故障时间 ·故障输出指示 ·关断控制 ·欠压锁定 · 8引脚SOIC UCC1913负高压断路器的家庭提供了完整的电源管理，热插拔，故障处理能力。该IC引用负输入电压，并通过外部驱动电阻连接到地面，这实质上是一种电流驱动反对传统的电压驱动。板上的10V并联稳压器从过电压保护IC和作为编程参考允许的最大输出拉电流出现故障。所有控制和内部管理功能集成，外
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UCC3580 PWM控制器系列产品的设计实施各种有源钳位/复位和同步整流器，开关转换器拓扑结构。虽然包含所有必要的功能，为固定频率高脉宽调制的性能，这种设计的附加功能列入辅助开关的驱动程序，补充主要电源开关，可编程死区时间或延迟之间的每个过渡。有源钳位/复位技术，允许操作单截至超出50％的占空比转换器，同时降低电压应力在交换机上，并允许更大的磁通摆幅为电源变压器。这种方法还可以通过减少开关损耗，恢复能量储存在漏感和开关，如寄生元素电容。振荡器编程与两个电阻和一个电容来设置开关频率和最大占空比。一个单独的同步坡道提供了一个前馈电压脉冲宽度调制和一个编程最大伏秒的限制。由振荡器产生的时钟包含频率
2012-11-23
DdatasheetPDF页码索引
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