AdvancedPowerMOSFET

FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •LowerLeakageCurrent:10µA(Max.)@VDS=-60V •LowerRDS(ON):0.362Ω(Typ.)

TO-92Plastic-EncapsulateTransistors

TO-92Plastic-EncapsulateTransistors NPNsilicon

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. Thetransistorissubdividedintofourgroups,A,B,C andD,accordingtoitsDCcurrentgain.As complementarytypethePNPtransistorST9015is recommended. Onspecialrequest,thesetransistorscanbe

FairchildQFETforSynchronousRectification

Introduction FairchildiscurrentlydevelopingandmarketinganewQFETseriesthathasimprovedRDS(on),gatecharge,andswitchingspeedcharacteristics.ThesuperiorfeaturesoftheseQFETsareveryusefulforincreasingtheefficiencyoflowoutputvoltagepowersupplies,makingitspecially

NPNEPITAXIALSILICONTRANSISTOR

PRE-AMPLIFIER,LOWLEVEL&LOWNOISE FEATURES *Hightotalpowerdissipation.(450mW) *ExcellenthFElinearity. *ComplementarytoUTC9015

NPNSILICONTRANSISTOR

FEATURES Powerdissipation PCM:0.4W(Tamb=25°C) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:50V