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TSM10N60CIC0中文资料

厂家型号

TSM10N60CIC0

文件大小

379.95Kbytes

页面数量

6

功能描述

600V N-Channel Power MOSFET

数据手册

下载地址一下载地址二到原厂下载

生产厂商

TSC

TSM10N60CIC0数据手册规格书PDF详情

General Description

The TSM10N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

Features

● Low RDS(ON) 0.75Ω (Max.)

● Low gate charge typical @ 45nC (Typ.)

● Low Crss typical @ 20pF (Typ.)

● Fast Switching

TSM10N60CIC0产品属性

  • 类型

    描述

  • 型号

    TSM10N60CIC0

  • 制造商

    TSC

  • 制造商全称

    Taiwan Semiconductor Company, Ltd

  • 功能描述

    600V N-Channel Power MOSFET

更新时间:2025-10-9 13:01:00
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T
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