General Description

The TriQuint T1G6000528-Q3 is a 7 W (P 3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven 0.25 µm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Product Features

• Frequency: DC to 6 GHz

• Linear Gain: >10 dB at 6 GHz

• Operating Voltage: 28 V

• Output Power (P3dB): >7 W at 6 GHz

• Lead-free and RoHS compliant

• Low thermal resistance package

Applications

• Wideband and narrowband defense and commercial communication systems

– General Purpose RF Power

– Jammers

– Radar

– Professional radio systems

– WiMAX

– Wideband amplifiers

– Test instrumentation

– Cellular infrastructure