位置:T1G4005528-FS > T1G4005528-FS详情

T1G4005528-FS中文资料

厂家型号

T1G4005528-FS

文件大小

830.91Kbytes

页面数量

4

功能描述

55W, 28V, DC ??3.5GHz, GaN RF Power Transistor

数据手册

下载地址一下载地址二到原厂下载

生产厂商

TRIQUINT

T1G4005528-FS数据手册规格书PDF详情

General Description

The TriQuint T1G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven 0.25um production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Product Features

• Frequency Range: DC to 3.5 GHz

• Linear Gain: >15 dB at 3.5 GHz

• Operating Voltage: 28 V

• Output Power (P3dB): 55 W at 3.5 GHz

• Lead-free and RoHS compliant

Applications

• Military radar

• Civilian radar

• Professional and military radio communications

• Test instrumentation

• Avionics

• Wideband or narrowband amplifiers

更新时间:2025-10-17 14:26:00
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