Description

The TP65H300G4LSG 650V, 240 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.

The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

Features

• JEDEC-qualified GaN technology

• Dynamic RDS(on) production tested

• Robust design, defined by

— Intrinsic lifetime tests

— Wide gate safety margin

— Transient over-voltage capability

• Enhanced inrush current capability

• Very low QRR

• Reduced crossover loss

Applications

• Consumer

• Power adapters

• Low power SMPS

• Lighting