DESCRIPTION

The TC2876 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. All devices are 100 DC tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications.

FEATURES

• 5 W Typical Output Power at 6 GHz

• 7 dB Typical Linear Power Gain at 6 GHz

• High Linearity: IP3 = 47 dBm Typical at 6 GHz

• High Power Added Efficiency: Nominal PAE of 40 at 6 GHz

• Suitable for High Reliability Application

• Breakdown Voltage: BVDGO ≥ 18 V

• Lg = 0.6 µm, Wg = 12 mm

• Tight Vp ranges control

• High RF input power handling capability

• 100 DC Tested

• Low Cost Ceramic Package