DESCRIPTION

The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable

Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.

The device has two 2112-byte static registers which allow program and read data to be transferred between the

register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block

unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).

The TC58NYG2S3E is a serial-type memory device which utilizes the I/O pins for both address and data

input/output as well as for command inputs. The Erase and Program operations are automatically executed making

the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still

cameras and other systems which require high-density non-volatile memory data storage.

FEATURES

• Organization

x8

Memory cell array 2112 × 256K × 8

Register 2112 × 8

Page size 2112 bytes

Block size (128K + 4K) bytes

• Modes

Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,

Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

• Mode control

Serial input/output

Command control

• Number of valid blocks

Min 4016 blocks

Max 4096 blocks

• Power supply

VCC = 1.7V to 1.95V

• Access time

Cell array to register 30 µs max

Serial Read Cycle 25 ns min (CL=30pF)

• Program/Erase time

Auto Page Program 300 µs/page typ.

Auto Block Erase 2.5 ms/block typ.

• Operating current

Read (25 ns cycle) 30 mA max.

Program (avg.) 30 mA max

Erase (avg.) 30 mA max

Standby 50 µA max

• Package

TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)