DESCRIPTION

The TC58NYG2S0F is a single 1.8V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable

Read-Only Memory (NAND E2PROM) organized as (4096  224) bytes  64 pages  2048blocks.

The device has two 4320-byte static registers which allow program and read data to be transferred between the

register and the memory cell array in 4320-byte increments. The Erase operation is implemented in a single block

unit (256 Kbytes  14 Kbytes: 4320 bytes  64 pages).

The TC58NYG2S0F is a serial-type memory device which utilizes the I/O pins for both address and data

input/output as well as for command inputs. The Erase and Program operations are automatically executed making

the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still

cameras and other systems which require high-density non-volatile memory data storage.

FEATURES

 Organization

x8

Memory cell array 4320  128K  8

Register 4320  8

Page size 4320 bytes

Block size (256K  14K) bytes

 Modes

Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,

Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

 Mode control

Serial input/output

Command control

 Number of valid blocks

Min 2008 blocks

Max 2048 blocks

 Power supply

VCC  1.7V to 1.95V

 Access time

Cell array to register 30 s max

Serial Read Cycle 25 ns min (CL=30pF)

 Program/Erase time

Auto Page Program 300 s/page typ.

Auto Block Erase 3 ms/block typ.

 Operating current

Read (25 ns cycle) 30 mA max.

Program (avg.) 30 mA max

Erase (avg.) 30 mA max

Standby 50 A max

 Package

P-TFBGA63-0911-0.80CZ (Weight: 0.15 g typ.)

 4bit ECC for each 512Byte is required.