TOSHIBA Power Transistor Module Silicon NPN Epitaxial

(Type Four Darlington Power Transistors in One)

High Power Switching Applications

Hammer Drive, Pulse Motor Drive and Inductive Load Switching

• Small package by full molding (SIP 10 pins)

• Built-in resistance (RB).

• Surge voltage is clamped by zener diode (C-B).

• Low VCE (sat): VCE (sat)= 1.5 V (max) (IC= 1 A, VBH= 4.2 V)

• High DC current gain: hFE= 2000 (min) (VCE= 2 V, IC= 1 A)