■General Description

The XP133A0245SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

The small SOP-8 package makes high density mounting possible.

◆ N-Channel Power MOS FET

◆ DMOS Structure

◆ Low On-State Resistance: 0.045Ω (max)

◆ Ultra High-Speed Switching

◆ SOP-8 Package

◆ Two FET Devices Built-in

■ Features

Low on-state resistance : Rds(on)=0.045Ω (Vgs=4.5V) : Rds(on)=0.060Ω (Vgs=2.5V) : Rds(on)=0.1Ω (Vgs=1.5V)

Ultra high-speed switching

Operational Voltage : 1.5V

High density mounting : SOP-8

■ Applications

● Notebook PCs

● Cellular and portable phones

● On-board power supplies

● Li-ion battery systems