BiCMOS Design Significantly Reduces ICCZ

ESD Protection Exceeds 2000 V Per

MIL-STD-883C, Method 3015; Exceeds

200 V Using Machine Model (C = 200 pF,

R = 0)

High-Impedance State During Power Up

and Power Down

Open-Collector Outputs Drive Bus Lines

or Buffer-Memory Address Registers

Package Options Include Plastic

Small-Outline (DW) Packages and Standard

Plastic and Ceramic 300-mil DIPs (N)

description

This octal buffer and line driver is designed specifically to improve both the performance and density of 3-state

memory address drivers, clock drivers, and bus-oriented receivers and transmitters. The device provides

complementary output-enable (OE and OE) inputs and noninverting outputs.

The SN64BCT757 is characterized for operation from –40°C to 85°C and 0°C to 70°C.