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DRV8701ERGET.B中文资料

厂家型号

DRV8701ERGET.B

文件大小

2228.87Kbytes

页面数量

40

功能描述

DRV8701 Brushed DC Motor Full-Bridge Gate Driver

数据手册

下载地址一下载地址二到原厂下载

生产厂商

TI2

DRV8701ERGET.B数据手册规格书PDF详情

1 Features

1• Single H-Bridge Gate Driver

– Drives Four External N-Channel MOSFETs

– Supports 100% PWM Duty Cycle

• 5.9-V to 45-V Operating Supply Voltage Range

• Two Control Interface Options

– PH/EN (DRV8701E)

– PWM (DRV8701P)

• Adjustable Gate Drive (5 Levels)

– 6-mA to 150-mA Source Current

– 12.5-mA to 300-mA Sink Current

• Supports 1.8-V, 3.3-V, and 5-V Logic Inputs

• Current Shunt Amplifier (20 V/V)

• Integrated PWM Current Regulation

– Limits Motor Inrush Current

• Low-Power Sleep Mode (9 μA)

• Two LDO Voltage Regulators to Power External

Components

– AVDD: 4.8 V, up to 30-mA Output Load

– DVDD: 3.3 V, up to 30-mA Output Load

• Small Package and Footprint

– 24-Pin VQFN (PowerPAD™)

– 4.0 × 4.0 × 0.9 mm

• Protection Features:

– VM Undervoltage Lockout (UVLO)

– Charge Pump Undervoltage (CPUV)

– Overcurrent Protection (OCP)

– Pre-Driver Fault (PDF)

– Thermal Shutdown (TSD)

– Fault Condition Output (nFAULT)

2 Applications

• Industrial Brushed-DC Motors

• Robotics

• Home Automation

• Industrial Pumps and Valves

• Power Tools

• Handheld Vacuum Cleaners

3 Description

The DRV8701 is a single H-bridge gate driver that uses four external N-channel MOSFETs targeted to

drive a 12-V to 24-V bidirectional brushed DC motor.

A PH/EN (DRV8701E) or PWM (DRV8701P)

interface allows simple interfacing to controller

circuits. An internal sense amplifier allows for

adjustable current control. The gate driver includes circuitry to regulate the winding current using fixed

off-time PWM current chopping.

DRV8701 drives both high- and low-side FETs with

9.5-V VGS gate drive. The gate drive current for all

external FETs is configurable with a single external

resistor on the IDRIVE pin.

A low-power sleep mode is provided which shuts

down internal circuitry to achieve very-low quiescent

current draw. This sleep mode can be set by taking

the nSLEEP pin low.

Internal protection functions are provided:

undervoltage lockout, charge pump faults,

overcurrent shutdown, short-circuit protection,

predriver faults, and overtemperature. Fault

conditions are indicated on the nFAULT pin.

更新时间:2025-11-5 11:06:00
供应商 型号 品牌 批号 封装 库存 备注 价格
24+
N/A
75000
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VQFN24
10000
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TI/德州仪器
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TI
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8560
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