Features

• Class one / Level one Production Screening

• Lot Acceptance Test options available

• 650 V enhancement mode power transistor

• Top-cooled, low inductance GaNPX® package

• RDS(on) = 25 mΩ

• IDS(max) = 60 A

• Ultra-low FOM

• Simple gate drive requirements (0 V to 6 V)

• Transient tolerant gate drive (-20 V / +10 V)

• Very high switching frequency ( > 10 MHz)

• Fast and controllable fall and rise times

• Reverse conduction capability

• Zero reverse recovery loss

• Small 9 x 7.6 mm2 PCB footprint

• Dual gate pads for optimal board layout

Applications

• Battery management

• Traction Drive

• dc-dc Converters

• Space Motor Drives

• Bridgeless Totem Pole PFC

Description

The TDG650E602TSP is a space-grade, 650 V,

enhancement mode, GaN-on-Silicon power transistor.

The properties of GaN allow for high current, high

voltage breakdown and high switching frequency. The

part based on GaN Systems innovates with industry

leading advancements such as patented Island

Technology® and GaNPX® packaging.

Island Technology® cell layout realizes high-current

die and high yield. GaNPX® packaging enables low

inductance & low thermal resistance in a small

package. The TDG650E602TSP is a top-side cooled

transistor that offers very low junction-to-case thermal

resistance for demanding high power space

applications. These features combined provide very

high efficiency power switching.