■Features

・Ideal for drive of IGBT and SiC MOSFET

・Gate voltage : +18V/-4V

・ALL-IN-ONE (Built-in isolated DC / DC converter and gate drive circuit)

・Low parasitic capacitance (about 12pF) ; highly resistant to common-mode noise.

・Fast response : about 100nsec(typ)

・The isolation for primary-secondary signal used fast response isolator.

・Input-to-Output dielectric withstand voltage : AC5000V

・Output CH1-to-Ouput CH2 dielectric withstand voltage : AC4000V

・Input-to-Output insulation distance : 14mm (clearance), 16mm(creepage） (As for Gate driver module PCB)

・Output CH1-to-Output CH2 insulation distance : 7mm (clearance), 12mm(creepage）

・DC/DC converter input voltage :13～28V

・Signal input voltage : 3.3V,5V

・Overload protection (DC/DC converter)

・Overheat protection (DC/DC converter)

・Half bridge mode (Gate drive circuit)

・Desaturation protection (Gate drive circuit)

・Soft turn-off function (Gate drive circuit)

・Fault signal output function (Gate drive circuit)

・Miller function (Gate drive circuit)

・Under-voltage lockout(UVLO) (Gate drive circuit)

・Insulating moistureproof coating

・Safety standards：UL508(file no.E243511) (DC/DC converter only)

・Reinforced isolation according to IEC 60664-1 (IEC61800-5-1, IEC62477-1, IEC62109-1, etc.)

・UL compliant (UL1741, UL508, etc.)

■Application

Industrial inverter, power conditioner, etc …