NPN SiGe RF POWER TRANSISTOR

The THN5601B is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-223 SMD package.

The THN5601B can be used as a driver device or an output device, depending on the specific application.

□ FEATURES

o 4.8 Volt operation

o P1dB 28 dBm @f=900MHz

o Power gain 8.5 dB @f=900MHz

□ APPLICATIONS

o Hand-held radio equipment in common

emitter class-AB operation in 900 MHz

communication band.