8A SCRs

DESCRIPTION Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8A SCR series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current l

Silicon controlled rectifiers

This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load.

Sensitive and standard 8 A SCRs

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8A SCRs

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Silicon controlled rectifiers

This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load.

8A SCRs

DESCRIPTION Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8A SCR series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current l

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)