丝印代码：TXS0104E；TXS0104E 4-Bit Bidirectional Voltage-Level Translator for Open-Drain and Push-Pull Applications

1 Features • No direction-control signal needed • Maximum data rates: – 24Mbps (push pull) – 2Mbps (open drain) • Available in the Texas Instruments NanoFree™ package • 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port (VCCA ≤ VCCB) • No power-supply sequencing required – VCCA or VC

丝印代码：TXS0104E；TXS0104E 4-Bit Bidirectional Voltage-Level Translator for Open-Drain and Push-Pull Applications

1 Features • No direction-control signal needed • Maximum data rates: – 24Mbps (push pull) – 2Mbps (open drain) • Available in the Texas Instruments NanoFree™ package • 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port (VCCA ≤ VCCB) • No power-supply sequencing required – VCCA or VC

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC TRNSLTR BIDIRECTIONAL 14SOIC 集成电路（IC） 转换器，电平移位器

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

文件：807.68 Kbytes Page：24 Pages

丝印代码：TXS0104E；TXS0104E 4-Bit Bidirectional Voltage-Level Translator for Open-Drain and Push-Pull Applications

文件：1.86923 Mbytes Page：41 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN APPLICATIONS

文件：729.51 Kbytes Page：21 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

文件：910.34 Kbytes Page：26 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

文件：679.58 Kbytes Page：22 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

文件：814.15 Kbytes Page：24 Pages

丝印代码：TXS0104E；TXS0104E 4-Bit Bidirectional Voltage-Level Translator for Open-Drain and Push-Pull Applications

1 Features • No direction-control signal needed • Maximum data rates: – 24Mbps (push pull) – 2Mbps (open drain) • Available in the Texas Instruments NanoFree™ package • 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port (VCCA ≤ VCCB) • No power-supply sequencing required – VCCA or VC

丝印代码：TXS0104E；TXS0104E 4-Bit Bidirectional Voltage-Level Translator for Open-Drain and Push-Pull Applications

1 Features • No direction-control signal needed • Maximum data rates: – 24Mbps (push pull) – 2Mbps (open drain) • Available in the Texas Instruments NanoFree™ package • 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port (VCCA ≤ VCCB) • No power-supply sequencing required – VCCA or VC

丝印代码：TXS0104E；TXS0104E 4-Bit Bidirectional Voltage-Level Translator for Open-Drain and Push-Pull Applications

1 Features • No direction-control signal needed • Maximum data rates: – 24Mbps (push pull) – 2Mbps (open drain) • Available in the Texas Instruments NanoFree™ package • 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port (VCCA ≤ VCCB) • No power-supply sequencing required – VCCA or VC

丝印代码：TXS0104E；TXS0104E 4-Bit Bidirectional Voltage-Level Translator for Open-Drain and Push-Pull Applications

1 Features • No direction-control signal needed • Maximum data rates: – 24Mbps (push pull) – 2Mbps (open drain) • Available in the Texas Instruments NanoFree™ package • 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on B port (VCCA ≤ VCCB) • No power-supply sequencing required – VCCA or VC

丝印代码：TXS0104E；TXS0104E 4-Bit Bidirectional Voltage-Level Translator for Open-Drain and Push-Pull Applications

文件：1.86923 Mbytes Page：41 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

文件：910.34 Kbytes Page：26 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

文件：814.15 Kbytes Page：24 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

文件：807.68 Kbytes Page：24 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN APPLICATIONS

文件：729.51 Kbytes Page：21 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

文件：679.58 Kbytes Page：22 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

文件：814.15 Kbytes Page：24 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

文件：679.58 Kbytes Page：22 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

文件：807.68 Kbytes Page：24 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

文件：910.34 Kbytes Page：26 Pages

丝印代码：TXS0104E；TXS0104E 4-Bit Bidirectional Voltage-Level Translator for Open-Drain and Push-Pull Applications

文件：1.86923 Mbytes Page：41 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN APPLICATIONS

文件：729.51 Kbytes Page：21 Pages

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC TRNSLTR BIDIRECTIONAL 14SOIC 集成电路（IC） 转换器，电平移位器

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

文件：814.15 Kbytes Page：24 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

文件：910.34 Kbytes Page：26 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN APPLICATIONS

文件：729.51 Kbytes Page：21 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

文件：679.58 Kbytes Page：22 Pages

4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS

文件：807.68 Kbytes Page：24 Pages

Silicon Schottky Barrier Diode for High Speed Switching

Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

Cascadable Silicon Bipolar MMIC Amplifier

Description The MSA-0104 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is designed for use as a general purpose 50 Ωgain block. Typical applications include narrow and wide bandwidth IF and RF amplifiers in c

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

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