丝印代码：D1509B；Bipolar Transistors Silicon NPN Epitaxial Type (Darlington Transistor)

Applications • Micromotor Drivers • Hammer Drivers • Switching • Power Amplifiers Features (1) High DC current gain : hFE = 2000 (min) (VCE = 2 V, IC = 1 A) (2) Low collector-emitter saturation voltage : VCE(sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) (3) Complementary to TTB1067B

Power transistor for high-speed switching applications

Feature：High hFE / Low saturation voltage\nApplication Scope：Power amplifier / Switching\nPolarity：NPN\nComplementary Product：TTB1067B\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Collector Current IC 2 A \nCollector Current ICP 3 A \nCollector power dissipation PC 10 W \nCollector power dissipation PC 1.5 W \nCollector-Base Voltage VCBO 80 V \nCollector-emitter voltage VCEO 80 V ;

包装：散装 描述：TRANSISTOR NPN TO126N 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Integrated Circuit 10-Step Dot/Bar Display Driver for Logarithmic Scale

Description: The NTE1509 is a monolithic integrated circuit in an 18–Lead DIP type package that senses analog voltage levels and drives 10 LEDs, LCDs, or vacuum fluorescent displays, providing a logarithmic 3dB analog display. A single pin changes the display from a bar graph to a moving dot di

800 MHz INPUT DIVIDE BY 2, 4 PRESCALER IC FOR PORTABLE SYSTEMS

800 MHz INPUT DIVIDE BY 2, 4 PRESCALER IC FOR PORTABLE SYSTEMS The µPB1511TB is a silicon monolithic integrated circuit designed as a divide by 2, 4 prescaler IC for portable radio systems. This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. C

1GHz INPUT DIVIDE BY 2, 4, 8 PRESCALER IC FOR PORTABLE SYSTEMS

1GHz INPUT DIVIDE BY 2, 4, 8 PRESCALER IC FOR PORTABLE SYSTEMS PPB1509GV is a divide by 2, 4, 8 prescaler IC for portable radio or cellular telephone applications. PPB1509GV is a shrink package version of PPB587G so that this small package contributes to reduce the mounting space. PPB1509GV is m

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For high-frequency amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

SPDT SWITCH GaAs MMIC

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