isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage : VCEO= 50V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching regulator output applications.

丝印代码：C016；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain : hFE = 400 to 1000 (IC = 0.5 A) (2) Low collector saturation voltage : VCE(sat) = 0.22 V (max) (IC = 1.6 A, IB = 32 mA) (3) High-speed switching : tf = 95 ns (typ.)

Power transistor for high-speed switching applications

Feature：High hFE / Low saturation voltage\nApplication Scope：DC/DC converters / High-speed switching\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 5 A \nCollector Current ICP 10 A \nCollector power dissipation PC 24 W \nCollector power dissipation PC 1.2 W \nCollector-Base Voltage VCBO 120 V \nCollector-emitter voltage VCEO 50 V ;

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

Low-Side Power Switch for Use in Solenoid,Lamp Drive Applications

Low-Side Power Switch for Use in Solenoid,Lamp Drive Applications ExPD (Excellent Power Device)

Data Retiming PLL with Automatic Rate Selection

文件：422.48 Kbytes Page：20 Pages

Data Retiming PLL with Automatic Rate Selection

文件：422.48 Kbytes Page：20 Pages

Data Retiming PLL with Automatic Rate Selection

文件：422.48 Kbytes Page：20 Pages