丝印代码：B1067B；Bipolar Transistors Silicon PNP Epitaxial Type (Darlington Transistor)

Applications • Micromotor Drivers • Hammer Drivers • Switching • Power Amplifiers Features (1) High DC current gain : hFE = 2000 (min) (VCE = -2 V, IC = -1 A) (2) Low collector-emitter saturation voltage : VCE(sat) = -1.5 V (max) (IC = -1 A, IB = -1 mA) (3) Complementary to TTD1509B

Power transistor for high-speed switching applications

Feature：High hFE / Low saturation voltage\nApplication Scope：Power amplifier / Switching\nPolarity：PNP\nComplementary Product：TTD1509B\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Collector Current IC -2 A \nCollector Current ICP -3 A \nCollector power dissipation PC 10 W \nCollector power dissipation PC 1.5 W \nCollector-Base Voltage VCBO -80 V \nCollector-emitter voltage VCEO -80 V ;

包装：散装 描述：TRANSISTOR PNP BIPO TO126N 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Rail-to-Rail, Very Low Noise Universal Dual Filter Building Block

文件：477.37 Kbytes Page：20 Pages

Rail-to-Rail, Very Low Noise Universal Dual Filter Building Block

文件：477.37 Kbytes Page：20 Pages

Rail-to-Rail, Very Low Noise Universal Dual Filter Building Block

文件：477.37 Kbytes Page：20 Pages

Low voltage versatile telephone transmission circuit with dialler interface

文件：175.45 Kbytes Page：28 Pages

Low voltage versatile telephone transmission circuit with dialler interface

文件：175.45 Kbytes Page：28 Pages