GaAs Infrared Emitting Diodes in 5 mm (T-13/4)Package

Description TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue–grey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistors. Features ● Low cost emitter ● Low forward voltage ● High radiant p

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

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Infrared Emitting Diode, 950 nm, GaAs

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Infrared Emitting Diode

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Infrared Emitting Diode, 950 nm, GaAs

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封装/外壳：径向 包装：散装 描述：EMITTER IR 950NM 150MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

丝印代码：-2L；PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: PMBT5550. FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • Switching and amplification in high voltage applications such as telephony.

PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a SOT323 plastic package. NPN complements: PMST5550 and PMST5551. FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • General purpose • Telephony.

丝印代码：P33；SMALL SIGNAL PNP TRANSISTORS

■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE AND HIGH VOLTAGE AMPLIFIER

MEDIUM POWER AMPLIFIER

MEDIUM POWER AMPLIFIER ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE

High Efficiency LED in 5 mm Tinted Diffused Package

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