Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

DESCRIPTION TSUS5200 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 950 nm • High reliability • Angle of ha

Infrared Emitting Diode, 950 nm, GaAs

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Infrared Emitting Diode

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Infrared Emitting Diode, 950 nm, GaAs

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封装/外壳：径向 包装：散装 描述：EMITTER IR 950NM 150MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared Emitting Diode, 950 nm, GaAs

文件：119.65 Kbytes Page：7 Pages

Infrared Emitting Diode, 950 nm, GaAs

文件：120.19 Kbytes Page：6 Pages

封装/外壳：径向，5mm 直径（T 1 3/4） 包装：卷带（TR） 描述：EMITTER IR 950NM STD 5MM 光电器件 LED 发射器 - 红外，紫外，可见光

1.55 關m Edge-Emitting LED DIP Module

GENERAL DESCRIPTION The OE5202G is a 1.55 μm, edge-emitting LED DIP module with a single-mode fiber pigtail. The high coupling efficiency of the OKI EE-LED yields a single-mode fiber output of over 20 μW. The module is an optimal light source for optical LAN systems and measuring instruments.

ROMless 8-bit microcontroller

DESCRIPTION The OM5202 8-Bit ROMless Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The OM5202 has the same instruction set as the 80C51. FEATURES • 80C51 central processing unit • no internal ROM, externally up to 64k bytes

ROMless 8-bit microcontroller

DESCRIPTION The OM5202 8-Bit ROMless Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The OM5202 has the same instruction set as the 80C51. FEATURES • 80C51 central processing unit • no internal ROM, externally up to 64k bytes

ROMless 8-bit microcontroller

DESCRIPTION The OM5202 8-Bit ROMless Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The OM5202 has the same instruction set as the 80C51. FEATURES • 80C51 central processing unit • no internal ROM, externally up to 64k bytes

GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package

Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features